Performance analysis of CsPbI3-based solar cells under light emitting diode illumination as an energy harvester for IoT and indoor photovoltaics

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-06-05 DOI:10.1007/s10825-024-02180-7

M. Sujith, R. Thandaiah Prabu, ATA. Kishore Kumar, Atul Kumar

{"title":"Performance analysis of CsPbI3-based solar cells under light emitting diode illumination as an energy harvester for IoT and indoor photovoltaics","authors":"M. Sujith, R. Thandaiah Prabu, ATA. Kishore Kumar, Atul Kumar","doi":"10.1007/s10825-024-02180-7","DOIUrl":null,"url":null,"abstract":"<div><p>Internet of things (IoT) has necessitated the development of indoor photovoltaics to enable a web of self-powered wireless sensors/nodes. We analysed a CsPbI<sub>3</sub> wide band gap perovskite for indoor photovoltaic application. An Indoor photovoltaic (IPV) device based on CsPbI<sub>3</sub> showed a theoretical efficiency of 51.5% at a band gap of 1.8 eV under indoor light-emitting diode (LED) illumination. This high efficiency is due to better capture of the narrow emission spectrum of LED by a high band gap CsPbI<sub>3</sub> absorber. Under low luminance of indoor light sources, there is a low density of photogenerated carriers, which increases the ratio of trapped electrons to photogenerated electrons. The low photogenerated carrier density lowered bulk recombination, and the high trapped electrons to photogenerated electrons ratio increases IPV sensitivity toward interfacial recombination. Finally, the device optimization strategies of the IPV device, distinct from outdoor illumination devices are highlighted.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"866 - 873"},"PeriodicalIF":2.2000,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02180-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Internet of things (IoT) has necessitated the development of indoor photovoltaics to enable a web of self-powered wireless sensors/nodes. We analysed a CsPbI₃ wide band gap perovskite for indoor photovoltaic application. An Indoor photovoltaic (IPV) device based on CsPbI₃ showed a theoretical efficiency of 51.5% at a band gap of 1.8 eV under indoor light-emitting diode (LED) illumination. This high efficiency is due to better capture of the narrow emission spectrum of LED by a high band gap CsPbI₃ absorber. Under low luminance of indoor light sources, there is a low density of photogenerated carriers, which increases the ratio of trapped electrons to photogenerated electrons. The low photogenerated carrier density lowered bulk recombination, and the high trapped electrons to photogenerated electrons ratio increases IPV sensitivity toward interfacial recombination. Finally, the device optimization strategies of the IPV device, distinct from outdoor illumination devices are highlighted.

Abstract Image

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

发光二极管照明下的 CsPbI3 太阳能电池作为物联网和室内光伏发电能源收集器的性能分析

物联网（IoT）要求开发室内光伏技术，以实现自供电无线传感器/节点网络。我们分析了一种用于室内光伏应用的 CsPbI3 宽带隙过氧化物。基于 CsPbI3 的室内光伏（IPV）设备显示，在室内发光二极管（LED）照明下，带隙为 1.8 eV 时的理论效率为 51.5%。之所以能达到如此高的效率，是因为高带隙 CsPbI3 吸收体能更好地捕捉 LED 的窄发射光谱。在室内光源亮度较低的情况下，光生载流子密度较低，从而增加了捕获电子与光生电子的比例。较低的光生载流子密度降低了体重组，而较高的俘获电子与光生电子比增加了 IPV 对界面重组的敏感性。最后，重点介绍了有别于室外照明设备的 IPV 设备优化策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.