A power-efficient fast-transient OCL-LDO with adaptive super source follower and active capacitor compensation management

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-07-25 DOI:10.1016/j.mejo.2024.106349

Yiling Xie , Baochuang Wang , Tianrui Lyu , Jiang Xiong , Jianping Guo

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Abstract

This paper presents a flipped voltage follower (FVF) based output-capacitor-less low-dropout regulator (OCL-LDO) with fast transient response, high power supply rejection (PSR), and low quiescent current for noise-sensitive circuits in internet-of-things (IoTs). An adaptive super source follower (ASSF) is proposed to effectively reduce the output impedance of the voltage buffer under heavy-loading conditions while keeping a low quiescent current under light-loading conditions. The active capacitor compensation management (ACCM) is proposed to solve the charge-sharing problem caused by the floating capacitors in the dynamic capacitor compensation circuit. The proposed OCL-LDO has been designed and fabricated in 22-nm CMOS technology. It can stabilize with load current ranging from 0 to 12 mA while consuming only 4.8-μA quiescent current. when the load current steps from 0.1 to 10 mA within 3.8 ns, the measured voltage undershoot is 55 mV and the recovery time is about 60 ns.

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具有自适应超级源跟随器和有源电容补偿管理功能的高能效快速瞬态 OCL-LDO

本文提出了一种基于翻转电压跟随器（FVF）的无输出电容低压差稳压器（OCL-LDO），它具有快速瞬态响应、高电源抑制（PSR）和低静态电流的特性，适用于物联网（IoT）中对噪声敏感的电路。我们提出了一种自适应超级源跟随器（ASSF），可在重负载条件下有效降低电压缓冲器的输出阻抗，同时在轻负载条件下保持较低的静态电流。提出了有源电容补偿管理 (ACCM) 技术，以解决动态电容补偿电路中浮动电容引起的电荷分享问题。所提出的 OCL-LDO 采用 22 纳米 CMOS 技术设计和制造。当负载电流在 3.8 ns 内从 0.1 mA 递增到 10 mA 时，测得的电压下冲为 55 mV，恢复时间约为 60 ns。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.

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