A new method for temperature field characterization of microsystems based on transient thermal simulation

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-11-02 DOI:10.1016/j.mejo.2024.106464

Yanrong Pei , Wenchang Li , Jian Liu , Tianyi Zhang

{"title":"A new method for temperature field characterization of microsystems based on transient thermal simulation","authors":"Yanrong Pei , Wenchang Li , Jian Liu , Tianyi Zhang","doi":"10.1016/j.mejo.2024.106464","DOIUrl":null,"url":null,"abstract":"<div><div>Microsystems face challenges such as high heat flux density and localized hot spots in the temperature field, significantly impacting their thermal reliability. Accurately and comprehensively characterizing the temperature field is a challenging problem in current research. We present a general high-order finite difference (GHOFD) algorithm for the high-accuracy numerical solution of the two-dimensional transient heat conduction equations (THCEs). The 10th-order GHOFD algorithm is accurate up to 10<sup>−7</sup> °C. Secondly, we present a viable approach for characterizing microsystems' steady-state and transient heat conduction mechanisms. We introduce two new characterization parameters: the gradient modulus and the heat flux direction factor (HFDF). The gradient modulus can more clearly characterize the magnitude of the gradient vector and quantitatively analyze the spatial position of the temperature field change in the microsystem. The HFDF can dynamically display the heat conduction process in the temperature field. Finally, using temperature field simulation and microsystem characterization, we have validated the effectiveness of the proposed method and new parameters.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124001681","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Microsystems face challenges such as high heat flux density and localized hot spots in the temperature field, significantly impacting their thermal reliability. Accurately and comprehensively characterizing the temperature field is a challenging problem in current research. We present a general high-order finite difference (GHOFD) algorithm for the high-accuracy numerical solution of the two-dimensional transient heat conduction equations (THCEs). The 10th-order GHOFD algorithm is accurate up to 10⁻⁷ °C. Secondly, we present a viable approach for characterizing microsystems' steady-state and transient heat conduction mechanisms. We introduce two new characterization parameters: the gradient modulus and the heat flux direction factor (HFDF). The gradient modulus can more clearly characterize the magnitude of the gradient vector and quantitatively analyze the spatial position of the temperature field change in the microsystem. The HFDF can dynamically display the heat conduction process in the temperature field. Finally, using temperature field simulation and microsystem characterization, we have validated the effectiveness of the proposed method and new parameters.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

基于瞬态热模拟的微系统温度场表征新方法

微系统面临着高热通量密度和温度场局部热点等挑战，严重影响了其热可靠性。准确而全面地描述温度场是当前研究中一个具有挑战性的问题。我们提出了一种通用高阶有限差分（GHOFD）算法，用于二维瞬态热传导方程（THCE）的高精度数值求解。10 阶 GHOFD 算法的精度可达 10-7 ℃。其次，我们提出了表征微系统稳态和瞬态热传导机制的可行方法。我们引入了两个新的表征参数：梯度模量和热通量方向因子（HFDF）。梯度模量可以更清晰地表征梯度矢量的大小，并定量分析微系统中温度场变化的空间位置。HFDF 可以动态显示温度场的热传导过程。最后，通过温度场模拟和微系统特性分析，我们验证了所提方法和新参数的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.

期刊最新文献

Thermoreflectance property of gallium nitride 3-D impedance matching network (IMN) based on through-silicon via (TSV) for RF energy harvesting system A new method for temperature field characterization of microsystems based on transient thermal simulation Editorial Board Study on the influence mechanism of gate oxide degradation on DM EMI signals in SiC MOSFET