A 3.0-V 4.2-μA 2.23-ppm/°C BGR with cross-connected NPNs and base-current compensation

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-07-25 DOI:10.1016/j.mejo.2024.106354

Weidong Xue , Xinwei Yu , Yisen Zhang , Xin Ming , Jian Fang , Junyan Ren

{"title":"A 3.0-V 4.2-μA 2.23-ppm/°C BGR with cross-connected NPNs and base-current compensation","authors":"Weidong Xue , Xinwei Yu , Yisen Zhang , Xin Ming , Jian Fang , Junyan Ren","doi":"10.1016/j.mejo.2024.106354","DOIUrl":null,"url":null,"abstract":"<div><p>This paper presents a high-precision, low-power bandgap voltage reference with a 3.0 V output voltage suitable for battery-management systems. Compared to Brokaw's type bandgap references (BGRs), Cross-connected NPN transistors facilitate higher output voltages without the necessity of operational amplifiers and are unaffected by the current-mirror mismatch. Base-current compensation is proposed to address the effect of base current on voltage output temperature characteristics at low power consumption. A piecewise exponential curvature correction stains high-order compensation for the nonlinear characteristic of base-emitter voltage. Experimental results of the proposed BGR implemented in a 0.18-μm Bipolar-CMOS-DMOS (BCD) process demonstrate that the temperature coefficient is 2.23 ppm/°C over the range of −40 °C–120 °C. The line regulation is 0.2 mV/V at a 5–6 V supply voltage with a supply current of only 4.2 μA. The die area of the fabricated BGR is 0.105 mm<sup>2</sup>.</p></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000584","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

This paper presents a high-precision, low-power bandgap voltage reference with a 3.0 V output voltage suitable for battery-management systems. Compared to Brokaw's type bandgap references (BGRs), Cross-connected NPN transistors facilitate higher output voltages without the necessity of operational amplifiers and are unaffected by the current-mirror mismatch. Base-current compensation is proposed to address the effect of base current on voltage output temperature characteristics at low power consumption. A piecewise exponential curvature correction stains high-order compensation for the nonlinear characteristic of base-emitter voltage. Experimental results of the proposed BGR implemented in a 0.18-μm Bipolar-CMOS-DMOS (BCD) process demonstrate that the temperature coefficient is 2.23 ppm/°C over the range of −40 °C–120 °C. The line regulation is 0.2 mV/V at a 5–6 V supply voltage with a supply current of only 4.2 μA. The die area of the fabricated BGR is 0.105 mm².

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A 3.0-V 4.2-μA 2.23-ppm/°C BGR，带交叉连接的 NPN 和基极电流补偿功能

本文介绍了一种输出电压为 3.0 V 的高精度、低功耗带隙电压基准，适用于电池管理系统。与 Brokaw 型带隙基准 (BGR) 相比，交叉连接的 NPN 晶体管无需运算放大器即可实现更高的输出电压，并且不受电流镜像失配的影响。为解决基极电流对低功耗电压输出温度特性的影响，提出了基极电流补偿方法。片式指数曲率校正为基极-发射极电压的非线性特性提供了高阶补偿。在 0.18μm 双极-CMOS-DMOS（BCD）工艺中实现的拟议 BGR 的实验结果表明，在 -40 °C-120 °C 范围内，温度系数为 2.23 ppm/°C。在 5-6 V 电源电压下，线路调节为 0.2 mV/V，电源电流仅为 4.2 μA。制造的 BGR 的芯片面积为 0.105 mm2。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.

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