A new behavioral-level model of superconducting Josephson junctions with Simulink

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-08-03 DOI:10.1007/s10825-024-02206-0

Yalin Zhong, Peng Chen

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Abstract

Josephson junctions based on superconducting materials are fundamental components for quantum detection, quantum communication and quantum computers. An accurate behavioral model of Josephson junctions is the prerequisite for predicting the response (or the behavior) of various superconducting circuits. In this study, we present a resistively and capacitively shunted junction model-based behavioral-level model for the current–voltage characteristics of Josephson junctions. This model accurately predicts the current–voltage characteristics and their temperature dependencies of Josephson junctions made of different materials under three typical working modes: underdamped voltage-driven, overdamped current-driven, and underdamped current-driven. Additionally, it forecasts the critical current and superconducting energy gap characteristics with respect to temperature, as well as the constraint relationship between the shunt resistance, superconducting energy gap, and critical current. Comparing the measured data with the simulation predictions, the model has an average accuracy of 89.28\(\%\), which demonstrate its reliability.

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利用 Simulink 建立超导约瑟夫森结的新行为级模型

基于超导材料的约瑟夫森结是量子探测、量子通信和量子计算机的基本组件。准确的约瑟夫森结行为模型是预测各种超导电路响应（或行为）的先决条件。在这项研究中，我们针对约瑟夫森结的电流-电压特性，提出了一个基于电阻和电容分流结模型的行为级模型。该模型准确预测了不同材料制成的约瑟夫森结在欠阻尼电压驱动、过阻尼电流驱动和欠阻尼电流驱动三种典型工作模式下的电流-电压特性及其温度依赖性。此外，它还预测了临界电流和超导能隙随温度变化的特性，以及并联电阻、超导能隙和临界电流之间的约束关系。将测量数据与模拟预测进行比较，该模型的平均精确度为 89.28（\%\），这证明了它的可靠性。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.