A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-08-24 DOI:10.1016/j.mejo.2024.106389
Tiedong Cheng, Xinlv Gong
{"title":"A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference","authors":"Tiedong Cheng,&nbsp;Xinlv Gong","doi":"10.1016/j.mejo.2024.106389","DOIUrl":null,"url":null,"abstract":"<div><p>—A low temperature coefficient (TC), low power subthreshold CMOS voltage reference (CVR) over a wide temperature range is presented in this paper. The proposed circuit employs the voltage difference between the two inputs of the operational amplifier as the proportional to absolute temperature (PTAT) voltage and the complementary to absolute temperature (CTAT) voltage, which is obtained by the <span><math><mrow><mo>Δ</mo><msub><mi>V</mi><mtext>GS</mtext></msub></mrow></math></span> of different-threshold transistors biased in the subthreshold region. The proposed CVR was designed in the 0.18-μm CMOS process with a total area of 0.0049 mm<sup>2</sup>. It achieves an average temperature coefficient (TC) of 10.3 ppm/°C over a temperature range of −40 °C–120 °C, with a TC of 4.9 ppm/°C at the TT corner. The measured power supply rejection ratio (PSRR) is −65 dB at 10 Hz and −30 dB at 1 MHz, while the power consumption is 59 nW at a supply voltage of 1 V. The average line sensitivity (LS) is 0.16 %/V, and the LS is 0.09 %/V at the TT corner.</p></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000936","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

—A low temperature coefficient (TC), low power subthreshold CMOS voltage reference (CVR) over a wide temperature range is presented in this paper. The proposed circuit employs the voltage difference between the two inputs of the operational amplifier as the proportional to absolute temperature (PTAT) voltage and the complementary to absolute temperature (CTAT) voltage, which is obtained by the ΔVGS of different-threshold transistors biased in the subthreshold region. The proposed CVR was designed in the 0.18-μm CMOS process with a total area of 0.0049 mm2. It achieves an average temperature coefficient (TC) of 10.3 ppm/°C over a temperature range of −40 °C–120 °C, with a TC of 4.9 ppm/°C at the TT corner. The measured power supply rejection ratio (PSRR) is −65 dB at 10 Hz and −30 dB at 1 MHz, while the power consumption is 59 nW at a supply voltage of 1 V. The average line sensitivity (LS) is 0.16 %/V, and the LS is 0.09 %/V at the TT corner.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 1 V 电源 10.3 ppm/°C 59 nW 亚阈值 CMOS 电压基准
-本文提出了一种在宽温度范围内具有低温度系数 (TC)、低功耗的亚阈值 CMOS 电压基准 (CVR)。该电路采用运算放大器两个输入端的电压差作为绝对温度比例电压 (PTAT) 和绝对温度互补电压 (CTAT),后者由偏置在亚阈值区的不同阈值晶体管的 ΔVGS 得出。拟议的 CVR 采用 0.18μm CMOS 工艺设计,总面积为 0.0049 mm2。它在 -40 °C-120 °C 的温度范围内实现了 10.3 ppm/°C 的平均温度系数 (TC),在 TT 角的 TC 为 4.9 ppm/°C。测得的电源抑制比 (PSRR) 在 10 Hz 时为 -65 dB,在 1 MHz 时为 -30 dB,电源电压为 1 V 时功耗为 59 nW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
期刊最新文献
Thermoreflectance property of gallium nitride 3-D impedance matching network (IMN) based on through-silicon via (TSV) for RF energy harvesting system A new method for temperature field characterization of microsystems based on transient thermal simulation Editorial Board Study on the influence mechanism of gate oxide degradation on DM EMI signals in SiC MOSFET
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1