{"title":"A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference","authors":"Tiedong Cheng, Xinlv Gong","doi":"10.1016/j.mejo.2024.106389","DOIUrl":null,"url":null,"abstract":"<div><p>—A low temperature coefficient (TC), low power subthreshold CMOS voltage reference (CVR) over a wide temperature range is presented in this paper. The proposed circuit employs the voltage difference between the two inputs of the operational amplifier as the proportional to absolute temperature (PTAT) voltage and the complementary to absolute temperature (CTAT) voltage, which is obtained by the <span><math><mrow><mo>Δ</mo><msub><mi>V</mi><mtext>GS</mtext></msub></mrow></math></span> of different-threshold transistors biased in the subthreshold region. The proposed CVR was designed in the 0.18-μm CMOS process with a total area of 0.0049 mm<sup>2</sup>. It achieves an average temperature coefficient (TC) of 10.3 ppm/°C over a temperature range of −40 °C–120 °C, with a TC of 4.9 ppm/°C at the TT corner. The measured power supply rejection ratio (PSRR) is −65 dB at 10 Hz and −30 dB at 1 MHz, while the power consumption is 59 nW at a supply voltage of 1 V. The average line sensitivity (LS) is 0.16 %/V, and the LS is 0.09 %/V at the TT corner.</p></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000936","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
—A low temperature coefficient (TC), low power subthreshold CMOS voltage reference (CVR) over a wide temperature range is presented in this paper. The proposed circuit employs the voltage difference between the two inputs of the operational amplifier as the proportional to absolute temperature (PTAT) voltage and the complementary to absolute temperature (CTAT) voltage, which is obtained by the of different-threshold transistors biased in the subthreshold region. The proposed CVR was designed in the 0.18-μm CMOS process with a total area of 0.0049 mm2. It achieves an average temperature coefficient (TC) of 10.3 ppm/°C over a temperature range of −40 °C–120 °C, with a TC of 4.9 ppm/°C at the TT corner. The measured power supply rejection ratio (PSRR) is −65 dB at 10 Hz and −30 dB at 1 MHz, while the power consumption is 59 nW at a supply voltage of 1 V. The average line sensitivity (LS) is 0.16 %/V, and the LS is 0.09 %/V at the TT corner.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
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