Growth, characterization, spectroscopic examination and computational analysis of optical properties of 3-Carboxypropanaminium DL-tartrate single crystal
C. Usha, Ali Raza Ayub, Anthoniammal Panneerselvam, M. Sumithra Devi, R. Jayashree, Tahani Mazyad Almutairi, Gautham Devendrapandi, Ranjith Balu
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引用次数: 0
Abstract
A slow evaporation solution growth approach was used for synthesizing 3-carboxypropanaminium DL-tartrate (3CPT). Powder X-ray diffraction verified the crystallinity of the material. The crystal’s optical characteristics and transmittance are revealed by the UV–Visible spectroscopic analysis. The crystal’s thermal equilibrium has been investigated using TGA/DTA testing. To study the crystal’s carbon and hydrogen environment, the FT NMR spectra were used. The present compound was investigated using both experimental and theoretical quantum calculations (optimized structure and IR) with the use of DFT theory at the B3LYP functional and 6–311 + + G(d, p) basis set. Molecular orbitals for the HOMO and LUMO states show that the molecule experienced a significant change in charge. The molecule is subjected to ELF and LOL for topological research. The 3CPT has NLO characteristics, according to the hyperpolarizability calculations.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.