{"title":"Z-scheme CoWO4/g-C3N4 heterojunction for enhanced ultraviolet-light-driven photocatalytic activity towards the degradation of tetracycline","authors":"Xiaoya Zhu, Ling Wang, Chujun Feng, Congtian Liu, Yanan Wang, Jian Rong, Zhongyu Li, Song Xu","doi":"10.1007/s10854-024-13809-5","DOIUrl":null,"url":null,"abstract":"<div><p>The photocatalytic performance of g-C<sub>3</sub>N<sub>4</sub> could be effectively improved by reducing the recombination rate of photogenerated electron–hole pairs. In this work, g-C<sub>3</sub>N<sub>4</sub> was combined with CoWO<sub>4</sub> to construct Z-scheme heterojunction by ultrasonic impregnation method. The successful synthesis of CoWO<sub>4</sub>/g-C<sub>3</sub>N<sub>4</sub> composites was confirmed by comprehensive characterization. Systematic studies showed that the well-matched band structures between them contributed to the formation of close interfacial contacts, which could effectively increase the transfer rate of photogenerated electrons. The photocatalytic degradation performance showed that the degradation efficiency of tetracycline (TC) reached 98.3% in 150 min under ultraviolet light, which was mainly due to the establishment of Z-scheme heterojunction. At the same time, CoWO<sub>4</sub>/g-C<sub>3</sub>N<sub>4</sub> composites could still maintain good stability after four cycles. In addition, the possible photocatalytic mechanism of CoWO<sub>4</sub>/g-C<sub>3</sub>N<sub>4</sub> composites was also proposed. This work provided an effective way for the preparation of efficient photocatalyst with the Z-scheme heterojunction.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13809-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The photocatalytic performance of g-C3N4 could be effectively improved by reducing the recombination rate of photogenerated electron–hole pairs. In this work, g-C3N4 was combined with CoWO4 to construct Z-scheme heterojunction by ultrasonic impregnation method. The successful synthesis of CoWO4/g-C3N4 composites was confirmed by comprehensive characterization. Systematic studies showed that the well-matched band structures between them contributed to the formation of close interfacial contacts, which could effectively increase the transfer rate of photogenerated electrons. The photocatalytic degradation performance showed that the degradation efficiency of tetracycline (TC) reached 98.3% in 150 min under ultraviolet light, which was mainly due to the establishment of Z-scheme heterojunction. At the same time, CoWO4/g-C3N4 composites could still maintain good stability after four cycles. In addition, the possible photocatalytic mechanism of CoWO4/g-C3N4 composites was also proposed. This work provided an effective way for the preparation of efficient photocatalyst with the Z-scheme heterojunction.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.