Z-scheme CoWO4/g-C3N4 heterojunction for enhanced ultraviolet-light-driven photocatalytic activity towards the degradation of tetracycline

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-06 DOI:10.1007/s10854-024-13809-5
Xiaoya Zhu, Ling Wang, Chujun Feng, Congtian Liu, Yanan Wang, Jian Rong, Zhongyu Li, Song Xu
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Abstract

The photocatalytic performance of g-C3N4 could be effectively improved by reducing the recombination rate of photogenerated electron–hole pairs. In this work, g-C3N4 was combined with CoWO4 to construct Z-scheme heterojunction by ultrasonic impregnation method. The successful synthesis of CoWO4/g-C3N4 composites was confirmed by comprehensive characterization. Systematic studies showed that the well-matched band structures between them contributed to the formation of close interfacial contacts, which could effectively increase the transfer rate of photogenerated electrons. The photocatalytic degradation performance showed that the degradation efficiency of tetracycline (TC) reached 98.3% in 150 min under ultraviolet light, which was mainly due to the establishment of Z-scheme heterojunction. At the same time, CoWO4/g-C3N4 composites could still maintain good stability after four cycles. In addition, the possible photocatalytic mechanism of CoWO4/g-C3N4 composites was also proposed. This work provided an effective way for the preparation of efficient photocatalyst with the Z-scheme heterojunction.

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Z 型 CoWO4/g-C3N4 异质结用于增强紫外线驱动的光催化降解四环素的活性
通过降低光生电子-空穴对的重组率,可以有效提高 g-C3N4 的光催化性能。本研究采用超声浸渍法将 g-C3N4 与 CoWO4 结合构建 Z 型异质结。综合表征证实了 CoWO4/g-C3N4 复合材料的成功合成。系统研究表明,它们之间匹配良好的带状结构有助于形成紧密的界面接触,从而有效地提高了光生电子的传输速率。光催化降解性能表明,在紫外光下 150 分钟内,四环素(TC)的降解效率达到 98.3%,这主要得益于 Z 型异质结的建立。同时,CoWO4/g-C3N4 复合材料在四个周期后仍能保持良好的稳定性。此外,还提出了 CoWO4/g-C3N4 复合材料可能的光催化机理。这项工作为制备具有 Z 型异质结的高效光催化剂提供了有效途径。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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