Boosting energy storage properties of BNT-based relaxor ferroelectric ceramics via (Zn1/3Nb2/3)4+ complex ion doping

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-08 DOI:10.1007/s10854-024-13816-6

Yan Li, Dong-Xu Li, Zong-Yang Shen, Zhipeng Li, Xuhai Shi, Wenqin Luo, Fusheng Song

{"title":"Boosting energy storage properties of BNT-based relaxor ferroelectric ceramics via (Zn1/3Nb2/3)4+ complex ion doping","authors":"Yan Li, Dong-Xu Li, Zong-Yang Shen, Zhipeng Li, Xuhai Shi, Wenqin Luo, Fusheng Song","doi":"10.1007/s10854-024-13816-6","DOIUrl":null,"url":null,"abstract":"<div>High power density electrostatic capacitor is a fundamental component of advanced electrical and electronic systems. Herein, the (Zn1/3Nb2/3)4+ complex ion was introduced into the B-site of Bi0.385Na0.325Ba0.105Sr0.155TiO3 relaxor ferroelectric ceramics to improve energy storage properties and dielectric temperature stability. All pseudo-cubic structured ceramics have clear grain boundaries with an average grain size of 1 ~ 2 μm. In the optimized composition, a recoverable energy density of 2.4 J/cm3 with an energy efficiency of 78% can be achieved under a relatively low electric field of 160 kV/cm, together with excellent stability and reliability of energy storage in temperature, frequency, and cycling fields, as well as fast charging–discharging rate. This work provides guidance for the design of high-performance energy storage dielectric materials by enhancing the B-site disorder of relaxor ferroelectric ceramics via complex ion doping.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13816-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

High power density electrostatic capacitor is a fundamental component of advanced electrical and electronic systems. Herein, the (Zn_1/3Nb_2/3)⁴⁺ complex ion was introduced into the B-site of Bi_0.385Na_0.325Ba_0.105Sr_0.155TiO₃ relaxor ferroelectric ceramics to improve energy storage properties and dielectric temperature stability. All pseudo-cubic structured ceramics have clear grain boundaries with an average grain size of 1 ~ 2 μm. In the optimized composition, a recoverable energy density of 2.4 J/cm³ with an energy efficiency of 78% can be achieved under a relatively low electric field of 160 kV/cm, together with excellent stability and reliability of energy storage in temperature, frequency, and cycling fields, as well as fast charging–discharging rate. This work provides guidance for the design of high-performance energy storage dielectric materials by enhancing the B-site disorder of relaxor ferroelectric ceramics via complex ion doping.

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通过掺杂 (Zn1/3Nb2/3)4+ 复合离子提高基于 BNT 的弛豫铁电陶瓷的储能特性

高功率密度静电电容器是先进电气和电子系统的基本组成部分。本文在 Bi0.385Na0.325Ba0.105Sr0.155TiO3 弛豫铁电陶瓷的 B 位引入了（Zn1/3Nb2/3）4+ 复合离子，以改善储能性能和介电温度稳定性。所有伪立方结构陶瓷都具有清晰的晶界，平均晶粒尺寸为 1 ~ 2 μm。在优化组合中，在 160 kV/cm 的相对较低电场下，可实现 2.4 J/cm3 的可回收能量密度和 78% 的能量效率，同时在温度、频率和循环场中具有出色的储能稳定性和可靠性，以及快速充放电速率。这项研究通过掺杂复杂离子来增强弛豫铁电陶瓷的 B 位无序性，为高性能储能介电材料的设计提供了指导。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.