The enhanced characteristics of bipolar phototransistor with huge amplification

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-26 DOI:10.1016/j.physe.2024.116110

Ruixue Bai , Yaojie Zhu , Xilin Zhang , Yulun Liu , Zuowei Yan , Hui Ma , Chongyun Jiang

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Abstract

Heterojunction devices based on low-dimensional materials have the potential for convenient and efficient photodetection applications. In this study, we demonstrate a van der Waals (vdW) heterojunction device constructed by p-ZrGeTe₄ and n-MoS₂. Forming a p-n junction, the response speed of the device increased by 6 orders of magnitude compared to devices with individual MoS₂. To further improve the responsivity of the device, a bipolar phototransistor (PTD) was prepared based on the p-n junction. The PTD achieves the photocurrent gain of almost 40. This PTD achieves high responsivity of 1.48 A W⁻¹, and the corresponding specific detectivity can reach 3 × 10¹⁴ Jones in low frequencies. Under low frequencies, the noise of the device is dominated by generation–recombination noise; and as the frequency increases, it gradually becomes dominated by 1/f noise. The PTD is competitive in optoelectronics and promising in high-performance integrated devices.

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具有巨大放大作用的双极型光电晶体管的增强特性

基于低维材料的异质结器件具有方便、高效的光探测应用潜力。在这项研究中，我们展示了一种由 p-ZrGeTe4 和 n-MoS2 构建的范德华（vdW）异质结器件。与单独使用 MoS2 的器件相比，形成 p-n 结的器件响应速度提高了 6 个数量级。为了进一步提高器件的响应速度，我们在 p-n 结的基础上制备了双极光电晶体管（PTD）。PTD 的光电流增益接近 40。该 PTD 的响应率高达 1.48 A W-1，相应的比检测率在低频下可达到 3 × 1014 Jones。在低频条件下，该器件的噪声主要是产生-再结合噪声；随着频率的增加，噪声逐渐由 1/f 噪声主导。PTD 在光电子领域具有竞争力，在高性能集成器件领域也大有可为。

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures

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