Wei-Qi Huang , Yin-lian Li , Zhong-Mei Huang , Hao-Ze Wang , Xi Zhang , Qi-Bin Liu , Shi-Rong Liu
{"title":"Emission cells with quantum dots on silicon chip prepared by using fs pulsed laser","authors":"Wei-Qi Huang , Yin-lian Li , Zhong-Mei Huang , Hao-Ze Wang , Xi Zhang , Qi-Bin Liu , Shi-Rong Liu","doi":"10.1016/j.sse.2024.109009","DOIUrl":null,"url":null,"abstract":"<div><div>Emission efficiency of bulk-silicon is very low due to its indirect-gap of energy band. However, it is interesting that the enhanced emission has been observed in the micro-cavities array fabricated by using femtosecond (fs) pulsed laser, in which the stimulated emission characteristics occur after annealing for suitable time in the photo-luminescence (PL) measurement at room temperature. The results of experiment and calculation demonstrated that the enhanced emission may be originated from the Si quantum dots embedded in the micro-cavities prepared by fs pulsed laser. Here, the direct-gap of energy band appears after annealing due to the Heisenberg principle related to ⊿k–1/⊿x in quantum system of nanostructures. The PL intensity obviously increases on the Si quantum dots growing with annealing for better crystallization, in which the external quantum efficiency is higher than 40 % near 760 nm. A new kind of emission source of the micro-cavities array in visible wavelength has been built on silicon wafer, in which the Si quantum dots play a main role for enhancement of emission. It should have a good application in optical integrated chip based on silicon, such as emission cells built on Si chip.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"221 ","pages":"Article 109009"},"PeriodicalIF":1.4000,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001588","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Emission efficiency of bulk-silicon is very low due to its indirect-gap of energy band. However, it is interesting that the enhanced emission has been observed in the micro-cavities array fabricated by using femtosecond (fs) pulsed laser, in which the stimulated emission characteristics occur after annealing for suitable time in the photo-luminescence (PL) measurement at room temperature. The results of experiment and calculation demonstrated that the enhanced emission may be originated from the Si quantum dots embedded in the micro-cavities prepared by fs pulsed laser. Here, the direct-gap of energy band appears after annealing due to the Heisenberg principle related to ⊿k–1/⊿x in quantum system of nanostructures. The PL intensity obviously increases on the Si quantum dots growing with annealing for better crystallization, in which the external quantum efficiency is higher than 40 % near 760 nm. A new kind of emission source of the micro-cavities array in visible wavelength has been built on silicon wafer, in which the Si quantum dots play a main role for enhancement of emission. It should have a good application in optical integrated chip based on silicon, such as emission cells built on Si chip.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.