{"title":"Characterization and luminescence properties of CaMgGe2O6: Mn2+ NIR-I mechanoluminescence phosphor","authors":"Zeqing Zhang, Wei Liu, Lin Li, Huan Li, Zhijun Zhang, Shuai Cheng, Guanghui Rao, Jingtai Zhao","doi":"10.1007/s10854-024-13669-z","DOIUrl":null,"url":null,"abstract":"<div><p>In recent years, materials exhibiting multimodal luminescence properties from deep red to near-infrared (NIR) wavelengths have been a focal point of research, particularly in the exploration of applications within the realms of stress sensing and dynamic signature anti-counterfeiting. A pyroxene-type layered crystal structure compound, CaMgGe<sub>2</sub>O<sub>6</sub>: Mn<sup>2+</sup>, has been reported as a mechanoluminescent (ML) material. Upon incorporation into the host, Mn<sup>2+</sup> ions preferentially substitute for Mg<sup>2+</sup> ions, emitting deep red to near-infrared light (600–800 nm) within this six-coordinated [MgO<sub>6</sub>] octahedral environment. The congruence of photoluminescence and ML spectra indicates that both types of luminescence originate from the same emissive center. The doping of Mn<sup>2+</sup> ions introduces impurity band, effectively reducing the optical band gap, as evidenced by ultraviolet diffuse reflectance measurements. Thermoluminescence results reveal three defect centers within the phosphor, whose concentrations decrease with Mn<sup>2+</sup> doping, correlating with a reduction in ML intensity. The ML mechanism of the phosphor is elucidated through the analysis of local piezoelectric properties within the crystal. Overall, this study may pave new pathways for the development of efficient near-infrared mechanoluminescent materials, showcasing potential applications within the biological domain.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13669-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In recent years, materials exhibiting multimodal luminescence properties from deep red to near-infrared (NIR) wavelengths have been a focal point of research, particularly in the exploration of applications within the realms of stress sensing and dynamic signature anti-counterfeiting. A pyroxene-type layered crystal structure compound, CaMgGe2O6: Mn2+, has been reported as a mechanoluminescent (ML) material. Upon incorporation into the host, Mn2+ ions preferentially substitute for Mg2+ ions, emitting deep red to near-infrared light (600–800 nm) within this six-coordinated [MgO6] octahedral environment. The congruence of photoluminescence and ML spectra indicates that both types of luminescence originate from the same emissive center. The doping of Mn2+ ions introduces impurity band, effectively reducing the optical band gap, as evidenced by ultraviolet diffuse reflectance measurements. Thermoluminescence results reveal three defect centers within the phosphor, whose concentrations decrease with Mn2+ doping, correlating with a reduction in ML intensity. The ML mechanism of the phosphor is elucidated through the analysis of local piezoelectric properties within the crystal. Overall, this study may pave new pathways for the development of efficient near-infrared mechanoluminescent materials, showcasing potential applications within the biological domain.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.