MoS2 as an alternate for Spiro-OMeTAD HTL in high-efficiency perovskite photovoltaics: simulation and experimental results analysis

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-21 DOI:10.1007/s10854-024-13697-9

Chandrasekar Karuppaiah, Dheebanathan Azhakanantham, Muthamizh Selvamani, Tukaram D. Dongale, Majed A. Alotaibi, Arul Varman Kesavan

{"title":"MoS2 as an alternate for Spiro-OMeTAD HTL in high-efficiency perovskite photovoltaics: simulation and experimental results analysis","authors":"Chandrasekar Karuppaiah, Dheebanathan Azhakanantham, Muthamizh Selvamani, Tukaram D. Dongale, Majed A. Alotaibi, Arul Varman Kesavan","doi":"10.1007/s10854-024-13697-9","DOIUrl":null,"url":null,"abstract":"<div>Continuous research efforts in the field of perovskite photovoltaics (PPV) have resulted in an impressive power conversion efficiency (PCE) of approximately 25%. However, the inherent instability of perovskite materials poses a significant challenge for real-time applications. Various strategies have been explored to enhance stability in photovoltaics, with one such approach involving the use of a stable and highly conductive hole transport layer (HTL) in PPV. Experimentally, spiro-OMeTAD has been widely employed as the most preferred Hole Transport Layer (HTL) in high-performance Perovskite Photovoltaics (PPV) devices. However, spiro-OMeTAD is highly susceptible to moisture, leading to device degradation. In this study, we investigate the potential of MoS2 as an alternative HTL to replace spiro-OMeTAD in the device architecture (FTO/SnO2/FAPbI3/spiro-OMeTAD/Au or MoS2/Au). To comprehensively assess MoS2's performance as an HTL, we conducted a detailed comparative analysis using the 1D-SCAPS simulation tool. The simulation results were compared with experimental data obtained from FTO/SnO2/FAPbI3/Spiro-OMeTAD/Au devices. Our findings revealed that MoS2-based PPV devices exhibited superior photovoltaic performance, achieving an efficiency of 26.4% compared to 25.2% for spiro-OMeTAD-based devices. Several key device parameters were systematically examined, including series resistance, shunt resistance, anode work function, and temperature to assess their impact on device performance. Additionally, we identified optimal device conditions and superior electrode materials, with a focus on device behaviour at elevated operating temperatures. To provide comprehensive insights into the advantages and challenges associated with MoS2 as an HTL in PPV architectures, we conducted an exhaustive comparison between 1D-SCAPS simulations of FTO/SnO2/FAPbI3/MoS2/Au and experimental data from FTO/SnO2/FAPbI3/spiro-OMeTAD/Au devices. This study offers valuable guidance for ongoing efforts aimed at enhancing perovskite photovoltaic devices' stability and performance.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13697-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Continuous research efforts in the field of perovskite photovoltaics (PPV) have resulted in an impressive power conversion efficiency (PCE) of approximately 25%. However, the inherent instability of perovskite materials poses a significant challenge for real-time applications. Various strategies have been explored to enhance stability in photovoltaics, with one such approach involving the use of a stable and highly conductive hole transport layer (HTL) in PPV. Experimentally, spiro-OMeTAD has been widely employed as the most preferred Hole Transport Layer (HTL) in high-performance Perovskite Photovoltaics (PPV) devices. However, spiro-OMeTAD is highly susceptible to moisture, leading to device degradation. In this study, we investigate the potential of MoS₂ as an alternative HTL to replace spiro-OMeTAD in the device architecture (FTO/SnO₂/FAPbI₃/spiro-OMeTAD/Au or MoS₂/Au). To comprehensively assess MoS₂'s performance as an HTL, we conducted a detailed comparative analysis using the 1D-SCAPS simulation tool. The simulation results were compared with experimental data obtained from FTO/SnO₂/FAPbI₃/Spiro-OMeTAD/Au devices. Our findings revealed that MoS₂-based PPV devices exhibited superior photovoltaic performance, achieving an efficiency of 26.4% compared to 25.2% for spiro-OMeTAD-based devices. Several key device parameters were systematically examined, including series resistance, shunt resistance, anode work function, and temperature to assess their impact on device performance. Additionally, we identified optimal device conditions and superior electrode materials, with a focus on device behaviour at elevated operating temperatures. To provide comprehensive insights into the advantages and challenges associated with MoS₂ as an HTL in PPV architectures, we conducted an exhaustive comparison between 1D-SCAPS simulations of FTO/SnO₂/FAPbI₃/MoS₂/Au and experimental data from FTO/SnO₂/FAPbI₃/spiro-OMeTAD/Au devices. This study offers valuable guidance for ongoing efforts aimed at enhancing perovskite photovoltaic devices' stability and performance.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

MoS2 作为高效率过氧化物光伏技术中螺-OMeTAD HTL 的替代品：模拟和实验结果分析

在透辉石光伏（PPV）领域的持续研究工作已使功率转换效率（PCE）达到令人印象深刻的约 25%。然而，包晶材料固有的不稳定性给实时应用带来了巨大挑战。人们探索了各种提高光伏稳定性的策略，其中一种方法是在 PPV 中使用稳定的高导电性空穴传输层 (HTL)。在实验中，螺-OMeTAD 已被广泛用作高性能过氧化物光伏（PPV）器件中最理想的空穴传输层（HTL）。然而，螺 OMeTAD 极易受潮，导致器件降解。在本研究中，我们研究了 MoS2 作为替代 HTL 的潜力，以取代器件结构（FTO/SnO2/FAPbI3/spiro-OMeTAD/Au 或 MoS2/Au）中的螺烯-OMeTAD。为了全面评估 MoS2 作为 HTL 的性能，我们使用 1D-SCAPS 模拟工具进行了详细的比较分析。模拟结果与从 FTO/SnO2/FAPbI3/Spiro-OMeTAD/Au 器件获得的实验数据进行了比较。我们的研究结果表明，基于 MoS2 的 PPV 器件具有卓越的光伏性能，其效率达到 26.4%，而基于螺纹-OMeTAD 器件的效率仅为 25.2%。我们系统地研究了几个关键器件参数，包括串联电阻、并联电阻、阳极功函数和温度，以评估它们对器件性能的影响。此外，我们还确定了最佳器件条件和优越的电极材料，重点关注器件在较高工作温度下的表现。为了全面了解 MoS2 作为 PPV 架构中 HTL 的优势和挑战，我们对 FTO/SnO2/FAPbI3/MoS2/Au 的 1D-SCAPS 模拟和 FTO/SnO2/FAPbI3/spiro-OMeTAD/Au 器件的实验数据进行了详尽的比较。这项研究为目前旨在提高过氧化物光伏器件稳定性和性能的工作提供了宝贵的指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.