Comparative analysis between solution-phase and thin films of cobalt(II) spin crossover (SCO) complexes with 8, 10, 12-carbon alkyl chains based on structural, optical and electrical properties

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-19 DOI:10.1007/s10854-024-13656-4
Nur Aishah Aminah Mohd Amin, Suhana Mohd Said, Nik Muhd Jazli Nik Ibrahim, Megat Muhammad Ikhsan Megat Hasnan, Mohd Faiz Mohd Salleh, Amalina Muhammad Afifi
{"title":"Comparative analysis between solution-phase and thin films of cobalt(II) spin crossover (SCO) complexes with 8, 10, 12-carbon alkyl chains based on structural, optical and electrical properties","authors":"Nur Aishah Aminah Mohd Amin,&nbsp;Suhana Mohd Said,&nbsp;Nik Muhd Jazli Nik Ibrahim,&nbsp;Megat Muhammad Ikhsan Megat Hasnan,&nbsp;Mohd Faiz Mohd Salleh,&nbsp;Amalina Muhammad Afifi","doi":"10.1007/s10854-024-13656-4","DOIUrl":null,"url":null,"abstract":"<div><p>Spin crossover (SCO) materials are compounds capable of switching between high-spin and low-spin states in response to external stimuli such as temperature. In this work, a series of cobalt(II) SCO complexes [Co₂(CH₃COO)₄(LC<sub>n</sub>)₂] (L = ligand, <i>n</i> = 8, 10, 12) were explored as potential materials for optoelectronic and thermo-electrochemical (TEC) devices. Previous efforts focused on solution-phase SCO complexes for TEC applications due to their high conductivity values but faced challenges such as solvent evaporation and instability. This study presents: (i) a comparative analysis of the physical properties between solution and thin film forms of these complexes, and (ii) optimisation of these properties by understanding the correlation between the molecular structure of the SCO complexes and their physical characteristics. Compared to their solution counterparts, the complexes in thin film formats demonstrated enhanced structural and optical stability. The thin films exhibited higher bandgap values (2.75–2.83 eV), making them suitable for optoelectronic applications. These films also showed more stable spin transitions, enhancing the overall system stability. The complex with the longest alkyl chain (12-carbon) showed higher solubility in solvents, allowing for more uniform and higher quality film. The longer alkyl chain in thin films showed a decrease in conductivity, suggesting enhanced charge trapping, making them promising for storage and memory devices. Conversely, in the solution phase, the longer alkyl chain showed an increase in ionic conductivity, beneficial for TEC applications. This study provides a systematic approach to designing SCO complexes for optimal performance in various electronic and electrochemical applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13656-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Spin crossover (SCO) materials are compounds capable of switching between high-spin and low-spin states in response to external stimuli such as temperature. In this work, a series of cobalt(II) SCO complexes [Co₂(CH₃COO)₄(LCn)₂] (L = ligand, n = 8, 10, 12) were explored as potential materials for optoelectronic and thermo-electrochemical (TEC) devices. Previous efforts focused on solution-phase SCO complexes for TEC applications due to their high conductivity values but faced challenges such as solvent evaporation and instability. This study presents: (i) a comparative analysis of the physical properties between solution and thin film forms of these complexes, and (ii) optimisation of these properties by understanding the correlation between the molecular structure of the SCO complexes and their physical characteristics. Compared to their solution counterparts, the complexes in thin film formats demonstrated enhanced structural and optical stability. The thin films exhibited higher bandgap values (2.75–2.83 eV), making them suitable for optoelectronic applications. These films also showed more stable spin transitions, enhancing the overall system stability. The complex with the longest alkyl chain (12-carbon) showed higher solubility in solvents, allowing for more uniform and higher quality film. The longer alkyl chain in thin films showed a decrease in conductivity, suggesting enhanced charge trapping, making them promising for storage and memory devices. Conversely, in the solution phase, the longer alkyl chain showed an increase in ionic conductivity, beneficial for TEC applications. This study provides a systematic approach to designing SCO complexes for optimal performance in various electronic and electrochemical applications.

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基于结构、光学和电学特性的 8、10 和 12 碳烷基链钴(II)自旋交叉 (SCO) 复合物溶液相和薄膜的比较分析
自旋交叉(SCO)材料是一种能够在温度等外部刺激下在高自旋和低自旋状态之间切换的化合物。这项研究探索了一系列钴(II)SCO 复合物[Co₂(CH₃COO)₄(LCn)₂](L = 配体,n = 8、10、12),将其作为光电和热电化学(TEC)器件的潜在材料。以前的研究主要集中在溶液相 SCO 复合物上,由于它们具有高电导率值,可用于 TEC 应用,但面临着溶剂蒸发和不稳定性等挑战。本研究介绍了(i) 对这些复合物的溶液和薄膜形式的物理性质进行比较分析,以及 (ii) 通过了解 SCO 复合物的分子结构与其物理性质之间的相关性来优化这些性质。与溶液形式的复合物相比,薄膜形式的复合物具有更高的结构和光学稳定性。薄膜显示出更高的带隙值(2.75-2.83 eV),使其适合光电应用。这些薄膜还显示出更稳定的自旋转变,提高了整个系统的稳定性。具有最长烷基链(12 个碳)的复合物在溶剂中的溶解度更高,因此薄膜更均匀、质量更高。薄膜中的烷基链越长,导电性越差,这表明电荷捕获能力越强,因此有望用于存储和记忆设备。相反,在溶液相中,烷基链越长,离子电导率越高,有利于 TEC 应用。这项研究为设计 SCO 复合物提供了一种系统方法,使其在各种电子和电化学应用中发挥最佳性能。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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