Hai-lin Ren , Yang Su , Shuai Zhao , Cheng-wei Li , Xiao-min Wang , Bo-han Li
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引用次数: 0
Abstract
Due to the structural properties of silicene itself, a substrate material is required to support it in practical use. Graphene is considered to be a good substrate material because of its many excellent properties. However, the heterostructure (Si/G) composed of graphene and silicene is low in stability, and it needs to be improved to enhance its stability. In this work, N and B co-doped graphene and silicene heterostructures (SiB/GN) are constructed with the aim of improving structural stability and obtaining better properties. Calculations show that the SiB/GN heterostructure still belongs to the vdW heterostructure. B doping can disrupt the topologically protected surface quantum states of graphene and silicene, and N doping can further increase the Coulombic attraction between graphene and silicene, thus increasing the binding energy to 22.58 meV Å−1, nearly twice that of Si/G. The density of states results show that the SiB/GN heterostructure is metallic before and after lithium embedding, which ensures good electrical conductivity. Due to the synergistic effect SiB/GN heterostructure exhibits stronger Li adsorption performance (2.36 eV), and lower diffusion barrier (0.229 eV), which is conducive to the inhibition of lithium dendrite formation and the improvement of the battery multiplicity charge/discharge performance.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.