{"title":"Green fabrication of aniline over mesoporous NiS/YVO4 S-type heterostructure photocatalyst under visible light exposure","authors":"Soad Z. Alsheheri , Tamer M. Khedr","doi":"10.1016/j.mssp.2024.109064","DOIUrl":null,"url":null,"abstract":"<div><div>The photocatalytic hydrogenation of hazardous nitrobenzene (NTB) can efficiently and safely yield aniline (AN), which holds considerable economic significance. The systematic development of superb visible light-proceeded photocatalytic substances that effectively harness the sun spectrum is crucial. In this contribution, mesoporous YVO<sub>4</sub> nanostructured crystals were first assembled employing block copolymer-aided sol-gel protocol and then coupled with NiS nanoparticles (NPs) (4.0–16.0 wt%) through ultrasonic self-growth and calcination to design mesoporous step-type (S-type) NiS/YVO<sub>4</sub> (N/Y) heterostructure photocatalysts. A detailed characterization substantiated powerful interface interaction and effective S-type charge transmission in the designed heterostructured materials. Moreover, optical and photoelectrochemical experiments unveiled superb light harvesting and improved charge separation efficiencies. Thanking the building of the S-type heterostructure, the N/Y heterostructure materials recorded notable photocatalytic proficiency than pristine YVO<sub>4</sub>. Specifically, under exposure to visible light for 50 min, the optimal material (12.0 % N/Y) at the best dosage (2.4 g/L) achieved 100 % selective phototransformation of NTB into AN with a rate constant (K) of 0.0696 min<sup>−1</sup>, superior to pristine YVO<sub>4</sub> (0.0015 min<sup>−1</sup>) by a factor of 46.4. The 12.0 % N/Y heterostructure also indicated superb cyclic stability, mostly retaining its remarkable efficacy over five consecutive runs. The positive influence of the catalyst content on the NTB photoreduction on 12.0 % N/Y was examined and affirmed by the catalyst dosage alteration. Additionally, based on Mott-Schottky (M − S) measurements, the pathway of charge migration for 12.0 % N/Y heterostructure was suggested. The current contribution offers estimable insights into developing highly effective and stable photocatalytic substances.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109064"},"PeriodicalIF":4.2000,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124009600","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The photocatalytic hydrogenation of hazardous nitrobenzene (NTB) can efficiently and safely yield aniline (AN), which holds considerable economic significance. The systematic development of superb visible light-proceeded photocatalytic substances that effectively harness the sun spectrum is crucial. In this contribution, mesoporous YVO4 nanostructured crystals were first assembled employing block copolymer-aided sol-gel protocol and then coupled with NiS nanoparticles (NPs) (4.0–16.0 wt%) through ultrasonic self-growth and calcination to design mesoporous step-type (S-type) NiS/YVO4 (N/Y) heterostructure photocatalysts. A detailed characterization substantiated powerful interface interaction and effective S-type charge transmission in the designed heterostructured materials. Moreover, optical and photoelectrochemical experiments unveiled superb light harvesting and improved charge separation efficiencies. Thanking the building of the S-type heterostructure, the N/Y heterostructure materials recorded notable photocatalytic proficiency than pristine YVO4. Specifically, under exposure to visible light for 50 min, the optimal material (12.0 % N/Y) at the best dosage (2.4 g/L) achieved 100 % selective phototransformation of NTB into AN with a rate constant (K) of 0.0696 min−1, superior to pristine YVO4 (0.0015 min−1) by a factor of 46.4. The 12.0 % N/Y heterostructure also indicated superb cyclic stability, mostly retaining its remarkable efficacy over five consecutive runs. The positive influence of the catalyst content on the NTB photoreduction on 12.0 % N/Y was examined and affirmed by the catalyst dosage alteration. Additionally, based on Mott-Schottky (M − S) measurements, the pathway of charge migration for 12.0 % N/Y heterostructure was suggested. The current contribution offers estimable insights into developing highly effective and stable photocatalytic substances.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.