{"title":"Single-layer black phosphorus-enhanced narrowband perfect absorber in the terahertz range","authors":"","doi":"10.1016/j.physe.2024.116144","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, a narrowband absorber based on black phosphorus (BP) is proposed. By utilizing a single-layer BP, a Si structure with four etched holes, and a perfectly electrically conductive (PEC) plate, multi-band absorption can be achieved in the range of 3.8 THz to 5.0 THz. The location and absorbance of the three peaks are 4.32 THz (99.7 %), 4.53 THz (95.6 %), and 4.69 THz (56.7 %), respectively. The anisotropy of the BP structure leads to different absorption spectra when illuminated by TE and TM polarized light sources. Altering the electron doping in BP allows control over the position and intensity of absorption peaks. Upon examining the electric field distribution of the absorber, it is evident that the dominant physical mechanism is the localized surface plasmon resonance (LSPR). Overall, the monolayer BP absorber designed in this study can be utilized to construct a polarimetric sensor for infrared wavelengths. Additionally, it provides a valuable reference for 2D anisotropic plasma devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica E-low-dimensional Systems & Nanostructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1386947724002480","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a narrowband absorber based on black phosphorus (BP) is proposed. By utilizing a single-layer BP, a Si structure with four etched holes, and a perfectly electrically conductive (PEC) plate, multi-band absorption can be achieved in the range of 3.8 THz to 5.0 THz. The location and absorbance of the three peaks are 4.32 THz (99.7 %), 4.53 THz (95.6 %), and 4.69 THz (56.7 %), respectively. The anisotropy of the BP structure leads to different absorption spectra when illuminated by TE and TM polarized light sources. Altering the electron doping in BP allows control over the position and intensity of absorption peaks. Upon examining the electric field distribution of the absorber, it is evident that the dominant physical mechanism is the localized surface plasmon resonance (LSPR). Overall, the monolayer BP absorber designed in this study can be utilized to construct a polarimetric sensor for infrared wavelengths. Additionally, it provides a valuable reference for 2D anisotropic plasma devices.
期刊介绍:
Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals.
Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena.
Keywords:
• topological insulators/superconductors, majorana fermions, Wyel semimetals;
• quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems;
• layered superconductivity, low dimensional systems with superconducting proximity effect;
• 2D materials such as transition metal dichalcogenides;
• oxide heterostructures including ZnO, SrTiO3 etc;
• carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.)
• quantum wells and superlattices;
• quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect;
• optical- and phonons-related phenomena;
• magnetic-semiconductor structures;
• charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling;
• ultra-fast nonlinear optical phenomena;
• novel devices and applications (such as high performance sensor, solar cell, etc);
• novel growth and fabrication techniques for nanostructures