Optical and scintillation properties of Tm-doped Ca3TaGa3Si2O14 single crystals

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-25 DOI:10.1007/s10854-024-13907-4

Ryosei Takahashi, Kai Okazaki, Daisuke Nakauchi, Takumi Kato, Noriaki Kawaguchi, Takayuki Yanagida

引用次数: 0

Abstract

Undoped and Tm-doped Ca₃TaGa₃Si₂O₁₄ (CTGS) single crystals were synthesized by the floating-zone method, and their photoluminescence (PL) and scintillation properties were investigated. The Tm-doped samples showed PL and scintillation due to 4f–4f transitions of Tm³⁺. The PL quantum yields of the 0.1, 0.5, 1, and 2% Tm-doped CTGS samples were, respectively, 4.2, 28.2, 27.6, and 8.3% when excited at 360 nm. The afterglow levels at 20 ms after X-ray irradiation of all the samples were 10–83 ppm. The 0.1, 0.5, and 1% Tm-doped CTGS samples, respectively, showed the light yields of 1300, 1800, and 1500 photons/MeV under γ-ray irradiation.

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掺 Tm 的 Ca3TaGa3Si2O14 单晶的光学和闪烁特性

采用浮区法合成了未掺杂和掺杂锝的 Ca3TaGa3Si2O14（CTGS）单晶，并研究了它们的光致发光（PL）和闪烁特性。掺杂 Tm 的样品由于 Tm3+ 的 4f-4f 转变而显示出 PL 和闪烁。在 360 纳米波长下激发时，掺杂 0.1%、0.5%、1% 和 2% Tm 的 CTGS 样品的 PL 量子产率分别为 4.2%、28.2%、27.6% 和 8.3%。所有样品在 X 射线照射后 20 毫秒的余辉水平均为 10-83 ppm。掺杂 0.1、0.5 和 1% Tm 的 CTGS 样品在 γ 射线照射下的光产率分别为 1300、1800 和 1500 光子/MeV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.