Vacuum evaporation deposited RbxCs1-xPbBr3 thin films for spectrally tunable and stable all-inorganic blue light-emitting diodes

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-14 DOI:10.1016/j.mssp.2024.109085
Tianxinyu Bai, Shenwei Wang, Weifang Zhang, Lixin Yi
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Abstract

Perovskite light emitting diodes (PeLEDs) have emerged as a promising technology for new display applications due to their high color purity and precisely adjustable band gap. However, compared to green and red PeLEDs, blue PeLEDs suffer from lower luminous efficiency and stability. Traditionally, pure blue perovskite luminescence is achieved using mixed halogens, which often leads to phase separation issues. In this paper, we directly introduced RbBr and prepared RbxCs1-xPbBr3 (x = 0.5,0.6,0.7) thin films using thermal evaporation, achieving wavelength-tunable and stable blue light emission ranging from 477 nm to 489 nm.This is the first report of using thermal evaporation for the fabrication of RbxCs1-xPbBr3 films. PeLEDs based on these films exhibited stable electroluminescence under varying driving voltages. Operated continuously over 30 min at 6 V in ambient air with 36 % humidity, these devices showed superior spectral stability. Using pure bromine-based material RbxCs1-xPbBr3 (x = 0.5,0.6,0.7) in the light-emitting layer solves the problem of phase separation of mixed halogens and achieves blue-light emission. Additionally, the introduction of Rb+ distorts the crystal structure of perovskite. This distortion decreases the bond length of Pb-Br bonds, increases the bond energy, and raises the formation energy of halogen anion vacancies. As a result, the density of perovskite defect states decreases, and thus the stability is enhanced. This work represents a rare example of vacuum thermal-evaporation processed RbxCs1-xPbBr3 films and all-inorganic perovskite LEDs.
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用于光谱可调且稳定的全有机蓝色发光二极管的真空蒸发沉积 RbxCs1-xPbBr3 薄膜
Perovskite 发光二极管(PeLED)具有色彩纯度高、带隙可精确调节等特点,已成为新型显示应用中一项前景广阔的技术。然而,与绿色和红色 PeLED 相比,蓝色 PeLED 的发光效率和稳定性较低。传统上,纯蓝色光致发光是通过混合卤素实现的,这往往会导致相分离问题。在本文中,我们直接引入了 RbBr,并利用热蒸发法制备了 RbxCs1-xPbBr3 (x = 0.5、0.6、0.7)薄膜,实现了波长可调且稳定的蓝光发射,波长范围为 477 nm 至 489 nm。基于这些薄膜的 PeLED 在不同的驱动电压下表现出稳定的电致发光。在湿度为 36% 的环境空气中,这些器件在 6 V 电压下连续工作 30 分钟,显示出卓越的光谱稳定性。在发光层中使用纯溴材料 RbxCs1-xPbBr3(x = 0.5、0.6、0.7)解决了混合卤素的相分离问题,并实现了蓝光发射。此外,Rb+ 的引入会扭曲透辉石的晶体结构。这种扭曲减少了 Pb-Br 键的键长,增加了键能,提高了卤素阴离子空位的形成能。因此,透辉石缺陷态密度降低,稳定性增强。这项研究是真空热蒸发处理 RbxCs1-xPbBr3 薄膜和全无机包晶 LED 的罕见实例。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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