A DFT + U scheme combined with Monte Carlo simulation to model the magnetocaloric effect and physical properties of the MnCoP compound

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-12-01 DOI:10.1016/j.mssp.2024.109088
B. Boussaida, R. Masrour
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Abstract

The first-principles calculations based on density functional theory (DFT) with the Hubbard U correction and Monte Carlo simulations have been used to study the structural, electronic, magnetic, mechanical, thermal, thermoelectric, optical, thermodynamic properties and magnetocaloric effect of the MnCoP compound. The structural analysis reveals that the compound is stable in its ferromagnetic configuration. As a result, our optimized lattice parameters are in good agreement with those obtained experimentally. Additionally, calculations of electronic band structure, total density (TDOS) and partial density (PDOS) of electronic states revealed that the compound behaves as a metal. Our compound is dynamically, mechanically and thermodynamically stable, as shown by the calculated phonon dispersion curves, elastic constants and negative formation energy. The MnCoP is a ductile material with a metallic bond, according to calculations of Poisson’s ratio and Pugh’s ratio. To describe the thermal behavior of this compound, transport properties including the figure of merit (ZT), thermal (k/τ) and electrical conductivities (σ/τ), power factor (PF) and Seebeck coefficient (S) were calculated. Furthermore, optical properties such as refractive index n(ω), reflectivity R(ω), extinction coefficient k(ω), dielectric constants ε(ω), optical conductivity σ(ω), Energy loss L(ω), and absorption coefficient α(ω) are examined. We have also employed the quasi-harmonic Debye model to investigate the thermodynamic properties. Based on the metallic nature and ferromagnetic properties, it is expected that this compound is a suitable material for spintronics, optoelectronics, and TE devices. Finally, we investigate the influence of the external magnetic field on the magnetic phase transitions, critical temperature, magnetization and specific heat capacity at a constant pressure of this material. Magnetic entropy and relative cooling capacity for different external magnetic fields are obtained around the critical temperature.
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采用DFT + U格式结合蒙特卡罗模拟模拟了MnCoP化合物的磁热效应和物理性质
基于密度泛函理论(DFT)和Hubbard U校正的第一性原理计算和蒙特卡罗模拟,研究了MnCoP化合物的结构、电子、磁、力学、热学、热电、光学、热力学性质和磁热效应。结构分析表明,该化合物在其铁磁构型下是稳定的。结果表明,优化后的晶格参数与实验结果吻合较好。此外,电子能带结构、电子态总密度(TDOS)和偏密度(PDOS)的计算表明,该化合物具有金属的性质。计算得到的声子色散曲线、弹性常数和负地层能表明,我们的化合物是动态、机械和热力学稳定的。根据泊松比和皮尤比的计算,MnCoP是一种具有金属键的延展性材料。为了描述该化合物的热行为,我们计算了其输运性质,包括优值(ZT)、导热系数(k/τ)和电导率(σ/τ)、功率因数(PF)和塞贝克系数(S)。此外,还测试了折射率n(ω)、反射率R(ω)、消光系数k(ω)、介电常数ε(ω)、光导率σ(ω)、能量损耗L(ω)和吸收系数α(ω)等光学特性。我们还采用了准调和德拜模型来研究热力学性质。基于金属性质和铁磁性,该化合物有望成为自旋电子学、光电子学和TE器件的合适材料。最后,研究了外加磁场对该材料的磁相变、临界温度、磁化强度和恒压比热容的影响。在临界温度附近得到了不同外加磁场下的磁熵和相对制冷量。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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