Heli Mistry , Shardul Vadalkar , Keyur N. Vyas , Prafulla K. Jha
{"title":"Adsorption mechanism of Ni decorated α-CN monolayer towards CO, NO, and NH₃ gases: Insights from DFT and semi-classical studies","authors":"Heli Mistry , Shardul Vadalkar , Keyur N. Vyas , Prafulla K. Jha","doi":"10.1016/j.mssp.2024.109106","DOIUrl":null,"url":null,"abstract":"<div><div>Toxic gases such as carbon monoxide (CO), nitric oxide (NO) and ammonia (NH<sub>3</sub>) pose serious health and environmental risks. While existing toxic gas monitors are costly, two-dimensional (2D) materials have shown promise for gas sensing applications due to their high surface-to-volume ratios and sensitivity. Among these, α-CN has been identified as a potential candidate for gas adsorption mechanisms. This study investigates the adsorption performance α-CN surface with the decoration of nickel (Ni)-atom for CO, NO, and NH₃ toxic gases using state of art density functional theory (DFT) based first principles calculations. The results indicate that the Ni-decoration significantly enhances the adsorption performance of α-CN, as evidenced by highly negative adsorption energies. Therefore, the calculated recovery times are extremely long, suggesting that Ni-decorated α-CN is more suitable for the removal of these toxic gases rather than as a sensor. The structural and electronic properties, including projected density of states (PDOS), band structure, charge density diagrams and transfer mechanisms, have been thoroughly analyzed. Additionally, sensing properties such as work function and electrical conductivity, computed using semi-classical methods, have been evaluated to validate the effectiveness of the material.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109106"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124010023","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Toxic gases such as carbon monoxide (CO), nitric oxide (NO) and ammonia (NH3) pose serious health and environmental risks. While existing toxic gas monitors are costly, two-dimensional (2D) materials have shown promise for gas sensing applications due to their high surface-to-volume ratios and sensitivity. Among these, α-CN has been identified as a potential candidate for gas adsorption mechanisms. This study investigates the adsorption performance α-CN surface with the decoration of nickel (Ni)-atom for CO, NO, and NH₃ toxic gases using state of art density functional theory (DFT) based first principles calculations. The results indicate that the Ni-decoration significantly enhances the adsorption performance of α-CN, as evidenced by highly negative adsorption energies. Therefore, the calculated recovery times are extremely long, suggesting that Ni-decorated α-CN is more suitable for the removal of these toxic gases rather than as a sensor. The structural and electronic properties, including projected density of states (PDOS), band structure, charge density diagrams and transfer mechanisms, have been thoroughly analyzed. Additionally, sensing properties such as work function and electrical conductivity, computed using semi-classical methods, have been evaluated to validate the effectiveness of the material.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.