Finite element simulation and experimental study of the coupling acoustic field characteristics of ultrasonic waves with internal defects inside microelectronic packaging

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-11-12 DOI:10.1016/j.mejo.2024.106479
Yuan Chen , Sitian Li , Dengxue Liu , Xiang Wan , Ming Dong
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Abstract

The miniaturization, ultra-thin and multi-layer complex structure of microelectronic packaging complicates the coupling acoustic field of ultrasonic waves and internal defects in the packaging, making accurate defect detection very difficult. In this paper, the finite element models of flip chip (FC) packaging and ball grid array (BGA) packaging are established to investigate the coupling acoustic field characteristics of ultrasonic waves and defects. In addition, based on the ultrasonic pitch and catch technique, the coupling laws of ultrasonic waves of different frequencies and the defects of different types, positions and sizes are analyzed by simulation, and the relationship between the relative amplitudes of the bottom waves and the sizes of different defects is revealed. Two specimens of microelectronic packaging are designed and fabricated to carry out the experimental studies using an ultrasonic signal acquisition system. The simulation and experimental results show that the relationship between the defects with small changes in the same location and the relative amplitudes of the bottom waves is basically linear, while the relationship between the solder ball extension defects with large changes and the relative amplitudes of the bottom waves is basically logarithmic, which provides a theoretical guidance for accurate evaluation of the type, size and location of defects in the practical detection.
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微电子封装内部缺陷与超声波耦合声场特性的有限元模拟和实验研究
微电子封装的微型化、超薄化和多层复杂结构使超声波与封装内部缺陷的耦合声场变得复杂,给缺陷的精确检测带来了很大困难。本文建立了倒装芯片(FC)封装和球栅阵列(BGA)封装的有限元模型,研究了超声波与缺陷的耦合声场特性。此外,基于超声波间距和捕捉技术,通过仿真分析了不同频率超声波与不同类型、位置和尺寸缺陷的耦合规律,揭示了底波相对振幅与不同缺陷尺寸之间的关系。设计并制作了两个微电子封装试样,利用超声波信号采集系统进行了实验研究。仿真和实验结果表明,同一位置变化较小的缺陷与底波相对振幅之间基本呈线性关系,而变化较大的焊球延伸缺陷与底波相对振幅之间基本呈对数关系,这为实际检测中准确评估缺陷的类型、大小和位置提供了理论指导。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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