An 85.6-dB SNDR 1.5 MHz-BW NS-pipelined SAR ADC employing the gain-error-shaping technique to enhance the ADC linearity

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2025-02-09 DOI:10.1016/j.mejo.2025.106593
Wenjie Liang , Dazheng Chen
{"title":"An 85.6-dB SNDR 1.5 MHz-BW NS-pipelined SAR ADC employing the gain-error-shaping technique to enhance the ADC linearity","authors":"Wenjie Liang ,&nbsp;Dazheng Chen","doi":"10.1016/j.mejo.2025.106593","DOIUrl":null,"url":null,"abstract":"<div><div>This paper presents a noise-shaping (NS) pipelined SAR ADC. For a pipelined-SAR ADC, Gain-error-shaping (GES) techniques executing its function in the digital domain can calibrate and correct amplifier gains, reducing nonlinearity errors introduced by amplifiers and thereby improving the ADC performance. Thanks to the highly digitized structure of SAR ADC, NS-pipelined SAR ADC based on the GES is a promising research direction.</div><div>In a 0.18 μm CMOS process, the proposed ADC achieves a SNDR of 82.57 dB, with the signal bandwidth and the sampling rate being 1.5 MHz and 25 MHz respectively. It consumes 3.37 mW in total at a 1.8-V supply, resulting in a SNDR-based Schreier figure-of-merit (FoMs) of 179.1 dB. The chip area occupied by the ADC core is 1200μm × 800 μm.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"157 ","pages":"Article 106593"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125000426","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This paper presents a noise-shaping (NS) pipelined SAR ADC. For a pipelined-SAR ADC, Gain-error-shaping (GES) techniques executing its function in the digital domain can calibrate and correct amplifier gains, reducing nonlinearity errors introduced by amplifiers and thereby improving the ADC performance. Thanks to the highly digitized structure of SAR ADC, NS-pipelined SAR ADC based on the GES is a promising research direction.
In a 0.18 μm CMOS process, the proposed ADC achieves a SNDR of 82.57 dB, with the signal bandwidth and the sampling rate being 1.5 MHz and 25 MHz respectively. It consumes 3.37 mW in total at a 1.8-V supply, resulting in a SNDR-based Schreier figure-of-merit (FoMs) of 179.1 dB. The chip area occupied by the ADC core is 1200μm × 800 μm.
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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