High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2024-11-18 DOI:10.1002/aelm.202400691
Yuan Huang, Eli Sutter, Bruce A. Parkinson, Peter Sutter
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Abstract

2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field‐effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at low carrier concentration. Here, it is shown that few‐layer/multilayer SnSe2 gated by a solution top gate combines very high room‐temperature electron mobility (up to 800 cm2 V−1s−1), along with large on‐off current ratios (>105) and a subthreshold swing below the thermodynamic limit (50 mV per decade) in field‐effect devices, at exceptionally large sheet carrier concentrations of ≈1013 cm−2. Observed mobility enhancements upon partial depletion of the channel point to near‐surface defects or impurities as the mobility‐limiting scattering centers. Under illumination, the resulting gap states give rise to gate‐controlled switching between positive and negative photoconductance. The results qualify SnSe2 as a promising layered semiconductor for flexible and wearable electronics, as well as for the realization of advanced approaches to photodetection.

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具有超低次阈值波动和栅极控制光电导切换功能的高迁移率、高载流子密度 SnSe2 场效应晶体管
二维和层状半导体被认为是前景广阔的电子材料,特别是在需要高载流子迁移率、高效场效应开关和机械灵活性的应用领域。然而,迄今为止,最高的迁移率主要是在低载流子浓度下实现的。这里的研究表明,采用溶液顶栅栅封的少层/多层 SnSe2 在室温下具有极高的电子迁移率(高达 800 cm2 V-1s-1),同时还具有较大的导通电流比(>105)和低于场效应器件热力学极限的亚阈值摆动(每10年 50 mV),而且片状载流子浓度特别大(≈1013 cm-2)。在沟道部分耗尽时观察到的迁移率增强表明,近表面缺陷或杂质是限制迁移率的散射中心。在光照下,由此产生的间隙态会导致正负光电导之间的栅极控制切换。研究结果证明,SnSe2 是一种很有前途的层状半导体,可用于柔性和可穿戴电子设备,以及实现先进的光检测方法。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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