Wendong Yang, Xun Zhao, Jingchang Nan, Michael Hengge, J. W. List-Kratochvil
{"title":"Copper Paste Printed Paper-Based Dual-Band Antenna for Wearable Wireless Electronics","authors":"Wendong Yang, Xun Zhao, Jingchang Nan, Michael Hengge, J. W. List-Kratochvil","doi":"10.1002/aelm.202400915","DOIUrl":null,"url":null,"abstract":"<p><i>Adv. Electron. Mater</i>. <b>2024</b> 2400522</p>\n<p>DOI: 10.1002/aelm.202400522</p>\n<p>The authors regret an error in Figure 4 and Figure 7 of the published article and have provided corrected versions, see below. Accordingly, the related analysis in the text has been updated as follows.</p>\n<p>Corrected Figure 4:</p>\n<p><img alt=\"image\" loading=\"lazy\" src=\"/cms/asset/61244c10-75b8-426b-956f-979256426b78/aelm1088-gra-0001.png\"/></p>\n<p>Figure 4. a) XRD results of copper films sintered at different plasma power for 30 min, b,c) XPS results of copper film sintered at 300 W for 30 min, d) Resistivity of copper films sintered at different temperatures for 60 min and e) at 300 W for different times.</p>\n<p>Corrected Text:</p>\n<p>A four-point probe system was used to investigate the electrical performance of the sintered copper films against plasma time or temperature. As shown in Figure 4d, e, the resistivity of the film decreases with increasing time or temperature. For plasma sintering, it decreases from (107.88 ± 7.49) × 10<sup>−4</sup> Ω cm to (19.17 ± 0.04) × 10<sup>−4</sup> Ω cm after 30 min, and for thermal sintering, it decreases from (52.15 ± 0.37) × 10<sup>−4</sup> Ω cm at 130 °C to (25.79 ± 0.4) ×10<sup>−4</sup> Ω cm at 170 °C.</p>\n<p>The decrease in resistivity with temperature or time is easily understood since organic matters mostly evaporate or/and decompose, and copper particles are better connected. In comparison with thermal sintering, plasma sintering achieves comparable electrical performance in less time, as proved by resistivities obtained at 150 °C for 60 min (30.11 × 10<sup>−4</sup> Ω cm) and 300 W for 15 min (33.68 × 10<sup>−4</sup> Ω cm).</p>\n<p>Corrected Figure 7:</p>\n<p><img alt=\"image\" loading=\"lazy\" src=\"/cms/asset/5e41730f-bd8e-40d3-b910-90fe0f3facef/aelm1088-gra-0002.png\"/></p>\n<p>Figure 7. a) The fabricated antenna prototype, b,c) test in an anechoic chamber, d) the measured reflection coefficient and e,f) radiation patterns at 2 and 8.2 GHz, g) the reflection coefficients against bending radii and h) the change in resistivity after bending</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400915","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Adv. Electron. Mater. 2024 2400522
DOI: 10.1002/aelm.202400522
The authors regret an error in Figure 4 and Figure 7 of the published article and have provided corrected versions, see below. Accordingly, the related analysis in the text has been updated as follows.
Corrected Figure 4:
Figure 4. a) XRD results of copper films sintered at different plasma power for 30 min, b,c) XPS results of copper film sintered at 300 W for 30 min, d) Resistivity of copper films sintered at different temperatures for 60 min and e) at 300 W for different times.
Corrected Text:
A four-point probe system was used to investigate the electrical performance of the sintered copper films against plasma time or temperature. As shown in Figure 4d, e, the resistivity of the film decreases with increasing time or temperature. For plasma sintering, it decreases from (107.88 ± 7.49) × 10−4 Ω cm to (19.17 ± 0.04) × 10−4 Ω cm after 30 min, and for thermal sintering, it decreases from (52.15 ± 0.37) × 10−4 Ω cm at 130 °C to (25.79 ± 0.4) ×10−4 Ω cm at 170 °C.
The decrease in resistivity with temperature or time is easily understood since organic matters mostly evaporate or/and decompose, and copper particles are better connected. In comparison with thermal sintering, plasma sintering achieves comparable electrical performance in less time, as proved by resistivities obtained at 150 °C for 60 min (30.11 × 10−4 Ω cm) and 300 W for 15 min (33.68 × 10−4 Ω cm).
Corrected Figure 7:
Figure 7. a) The fabricated antenna prototype, b,c) test in an anechoic chamber, d) the measured reflection coefficient and e,f) radiation patterns at 2 and 8.2 GHz, g) the reflection coefficients against bending radii and h) the change in resistivity after bending
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.