Copper Paste Printed Paper-Based Dual-Band Antenna for Wearable Wireless Electronics

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2025-02-04 DOI:10.1002/aelm.202400915
Wendong Yang, Xun Zhao, Jingchang Nan, Michael Hengge, J. W. List-Kratochvil
{"title":"Copper Paste Printed Paper-Based Dual-Band Antenna for Wearable Wireless Electronics","authors":"Wendong Yang,&nbsp;Xun Zhao,&nbsp;Jingchang Nan,&nbsp;Michael Hengge,&nbsp;J. W. List-Kratochvil","doi":"10.1002/aelm.202400915","DOIUrl":null,"url":null,"abstract":"<p><i>Adv. Electron. Mater</i>. <b>2024</b> 2400522</p><p>DOI: 10.1002/aelm.202400522</p><p>The authors regret an error in Figure 4 and Figure 7 of the published article and have provided corrected versions, see below. Accordingly, the related analysis in the text has been updated as follows.</p><p>Corrected Figure 4:</p><p></p><p>Figure 4. a) XRD results of copper films sintered at different plasma power for 30 min, b,c) XPS results of copper film sintered at 300 W for 30 min, d) Resistivity of copper films sintered at different temperatures for 60 min and e) at 300 W for different times.</p><p>Corrected Text:</p><p>A four-point probe system was used to investigate the electrical performance of the sintered copper films against plasma time or temperature. As shown in Figure 4d, e, the resistivity of the film decreases with increasing time or temperature. For plasma sintering, it decreases from (107.88 ± 7.49) × 10<sup>−4</sup> Ω cm to (19.17 ± 0.04) × 10<sup>−4</sup> Ω cm after 30 min, and for thermal sintering, it decreases from (52.15 ± 0.37) × 10<sup>−4</sup> Ω cm at 130 °C to (25.79 ± 0.4) ×10<sup>−4</sup> Ω cm at 170 °C.</p><p>The decrease in resistivity with temperature or time is easily understood since organic matters mostly evaporate or/and decompose, and copper particles are better connected. In comparison with thermal sintering, plasma sintering achieves comparable electrical performance in less time, as proved by resistivities obtained at 150 °C for 60 min (30.11 × 10<sup>−4</sup> Ω cm) and 300 W for 15 min (33.68 × 10<sup>−4</sup> Ω cm).</p><p>Corrected Figure 7:</p><p></p><p>Figure 7. a) The fabricated antenna prototype, b,c) test in an anechoic chamber, d) the measured reflection coefficient and e,f) radiation patterns at 2 and 8.2 GHz, g) the reflection coefficients against bending radii and h) the change in resistivity after bending</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 3","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400915","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202400915","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Adv. Electron. Mater. 2024 2400522

DOI: 10.1002/aelm.202400522

The authors regret an error in Figure 4 and Figure 7 of the published article and have provided corrected versions, see below. Accordingly, the related analysis in the text has been updated as follows.

Corrected Figure 4:

Figure 4. a) XRD results of copper films sintered at different plasma power for 30 min, b,c) XPS results of copper film sintered at 300 W for 30 min, d) Resistivity of copper films sintered at different temperatures for 60 min and e) at 300 W for different times.

Corrected Text:

A four-point probe system was used to investigate the electrical performance of the sintered copper films against plasma time or temperature. As shown in Figure 4d, e, the resistivity of the film decreases with increasing time or temperature. For plasma sintering, it decreases from (107.88 ± 7.49) × 10−4 Ω cm to (19.17 ± 0.04) × 10−4 Ω cm after 30 min, and for thermal sintering, it decreases from (52.15 ± 0.37) × 10−4 Ω cm at 130 °C to (25.79 ± 0.4) ×10−4 Ω cm at 170 °C.

The decrease in resistivity with temperature or time is easily understood since organic matters mostly evaporate or/and decompose, and copper particles are better connected. In comparison with thermal sintering, plasma sintering achieves comparable electrical performance in less time, as proved by resistivities obtained at 150 °C for 60 min (30.11 × 10−4 Ω cm) and 300 W for 15 min (33.68 × 10−4 Ω cm).

Corrected Figure 7:

Figure 7. a) The fabricated antenna prototype, b,c) test in an anechoic chamber, d) the measured reflection coefficient and e,f) radiation patterns at 2 and 8.2 GHz, g) the reflection coefficients against bending radii and h) the change in resistivity after bending

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用于可穿戴无线电子设备的铜浆印刷纸基双频天线
放置电子。Mater. 2024 2400522DOI: 10.1002/aelm。202400522作者对已发表文章图4和图7中的错误表示歉意,并提供了更正后的版本,见下文。因此,案文中的有关分析订正如下。修正后的图4:图4a)不同等离子体功率烧结30 min铜膜的XRD结果,b,c) 300 W烧结30 min铜膜的XPS结果,d)不同温度烧结60 min铜膜的电阻率,e) 300 W烧结不同时间铜膜的电阻率。一个四点探针系统被用来研究烧结铜膜的电性能对等离子体时间或温度的影响。如图4d, e所示,薄膜的电阻率随时间或温度的增加而降低。对于等离子烧结,30 min后从(107.88±7.49)×10−4 Ω cm减小到(19.17±0.04)×10−4 Ω cm;对于热烧结,在130℃时从(52.15±0.37)×10−4 Ω cm减小到170℃时的(25.79±0.4)×10−4 Ω cm。电阻率随温度或时间的降低是很容易理解的,因为有机物质大多蒸发或/和分解,铜颗粒更好地连接。与热烧结相比,等离子烧结在更短的时间内实现了相当的电性能,在150°C下60分钟(30.11 × 10−4 Ω cm)和300 W下15分钟(33.68 × 10−4 Ω cm)的电阻率证明了这一点。更正图7:图7。a)制作的天线样机,b,c)暗室测试,d)测量的反射系数和e,f) 2 GHz和8.2 GHz的辐射方向图,g)弯曲半径反射系数,h)弯曲后电阻率变化
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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