{"title":"Comprehensive study on thermal, structural, and luminescent properties of BiYWO6: Eu3+ phosphors synthesized by various methods","authors":"Indrajeet Maurya, M. Jayasimhadri","doi":"10.1007/s10854-024-13852-2","DOIUrl":null,"url":null,"abstract":"<div><p>Europium-activated bismuth yttrium tungstate (BYW: Eu<sup>3+</sup>) phosphors were synthesized by four various synthesis techniques such as solid-state reaction (SSR), sol–gel combustion (SGC), co-precipitation (CP), and hydrothermal (HT) methods. Relative investigations such as thermal, structural, morphological, and luminescence characterizations have been carried out to optimize the synthesis process of BYW:Eu<sup>3+</sup>phosphor. The TGA–DSC curves signify the endothermic/exothermic peaks and corresponding weight loss during heating. X-ray diffraction analysis and Rietveld refinement have been used to identify the phase and crystal structure of the undoped and doped BiYWO<sub>6</sub> sample. The field emission scanning electron microscope with energy-dispersive X-ray was carried out to examine the morphological and compositional behavior of the synthesized BYW: Eu<sup>3+</sup>phosphor. The luminescent spectral profiles indicate the strong absorption in the blue region (<i>λ</i><sub>ex</sub> = 465 nm) and intense emission in the red region (<i>λ</i><sub>em</sub> = 613 nm) ascribed to the <sup>5</sup>D<sub>0</sub> → <sup>7</sup>F<sub>2</sub> transition. The compared photoluminescence (PL) results signify that the phosphor synthesized by the CP method at calcination temperature 900 °C exhibits the strongest emission than the phosphor synthesized via other methods (SGC, SSR, and HT) and is especially two times higher than the phosphor synthesized by the SSR method. Further, the PL intensity enhanced with increasing activator concentration of Eu<sup>3+</sup> ions up to 20 mol%. The calculated CIE chromaticity coordinates (0.654, 0.345) of 20.0 mol% Eu<sup>3+</sup>-doped BYW sample were situated in the red region, which is comparable with the commercially available red-emitting phosphors Y<sub>2</sub>O<sub>3</sub>:Eu<sup>3+</sup> (0.645, 0.347) and Y<sub>2</sub>O<sub>2</sub>S:Eu<sup>3+</sup> (0.647, 0.343). The average PL decay time of the synthesized phosphor was in the microseconds range. The obtained results suggest that the BiYWO<sub>6</sub> activated with Eu<sup>3+</sup> ions phosphor synthesized by the CP method has distinctive PL characteristics with good morphology, which can be employed as an intense red-emitting component in photonics devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13852-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Europium-activated bismuth yttrium tungstate (BYW: Eu3+) phosphors were synthesized by four various synthesis techniques such as solid-state reaction (SSR), sol–gel combustion (SGC), co-precipitation (CP), and hydrothermal (HT) methods. Relative investigations such as thermal, structural, morphological, and luminescence characterizations have been carried out to optimize the synthesis process of BYW:Eu3+phosphor. The TGA–DSC curves signify the endothermic/exothermic peaks and corresponding weight loss during heating. X-ray diffraction analysis and Rietveld refinement have been used to identify the phase and crystal structure of the undoped and doped BiYWO6 sample. The field emission scanning electron microscope with energy-dispersive X-ray was carried out to examine the morphological and compositional behavior of the synthesized BYW: Eu3+phosphor. The luminescent spectral profiles indicate the strong absorption in the blue region (λex = 465 nm) and intense emission in the red region (λem = 613 nm) ascribed to the 5D0 → 7F2 transition. The compared photoluminescence (PL) results signify that the phosphor synthesized by the CP method at calcination temperature 900 °C exhibits the strongest emission than the phosphor synthesized via other methods (SGC, SSR, and HT) and is especially two times higher than the phosphor synthesized by the SSR method. Further, the PL intensity enhanced with increasing activator concentration of Eu3+ ions up to 20 mol%. The calculated CIE chromaticity coordinates (0.654, 0.345) of 20.0 mol% Eu3+-doped BYW sample were situated in the red region, which is comparable with the commercially available red-emitting phosphors Y2O3:Eu3+ (0.645, 0.347) and Y2O2S:Eu3+ (0.647, 0.343). The average PL decay time of the synthesized phosphor was in the microseconds range. The obtained results suggest that the BiYWO6 activated with Eu3+ ions phosphor synthesized by the CP method has distinctive PL characteristics with good morphology, which can be employed as an intense red-emitting component in photonics devices.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.