Effect of Sr2+ doping on structural, dielectric, electrical, and optical properties of BaTiO3 ceramics

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-20 DOI:10.1007/s10854-025-14592-7
Riya Malik, Pooja Dahiya,  Priya, Ashima Hooda, Satish Khasa
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Abstract

The proposed article provides insights into the impacts of Sr substitution on the structural, electrical, dielectric, and optical properties of barium titanate (BT). Fabrication of the series Ba1-xSrxTiO3 (x = 0.03, 0.05, 0.07) (BST) has been accomplished via solid-state reaction route with the additive advantage of being eco-friendly. X-ray diffraction (XRD) supported by the Rietveld refinement elucidated phase purity, single phase, and crystalline behavior of synthesized ceramics. Structural studies were lightened by the Fourier transform infrared spectroscopy (FTIR) whose analysis demonstrated in the range of wavenumber 400 to 4000 cm−1. It validated BaTiO3 by marking the presence of a prominent peak of Ti–O’s ‘stretching vibration’ within TiO6 octahedron. Here, the blue shift that occurred was attributed to the Sr substitution. The scanning electron microscope (SEM) along with energy-dispersive X-ray spectroscopy (EDS) provided a glance on the morphological and compositional analysis. Both tangent loss (tanδ) and dielectric constant exhibited dispersion at low frequency. The variation of DC electrical conductivity with temperature signified the semiconducting behavior of the synthesized material. UV–vis spectroscopy analysis was performed in DRS mode in the wavelength range of 200–800 nm. Tauc’s plot and absorbance spectra indicated that the optical bandgap increases upon adding Sr2+ ions compared to pristine BT. For structural purity, the Raman Spectroscopy has been performed in the wavenumber range of 200–1000 cm−1. These findings contribute that BST is a promising material for a variety of applications mainly in the field of optoelectronic devices operating in the visible range.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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