{"title":"Room temperature current conduction mechanisms in Ba0.5Sr0.5TiO3 and Ba0.5Sr0.5TiO3/TiO2 multilayer memristor structures","authors":"Ozlem Akin, Hasan Efeoglu","doi":"10.1007/s10854-025-14536-1","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, pure BaSrTiO<sub>3</sub> (BST) thin films and layered BST/TiO<sub>2</sub> thin films were fabricated on Cr/SiO<sub>2</sub>/Si substrates for a possible fourth passive device in electronics called a memristor. Radio frequency- and high-power impulse magnetron sputtering-based reactive sputtering was used for the deposition of films. While analyzing the memristor behavior by IV-t measurement at room temperature, optical, structural, surface morphology, thermal annealing effect, and current conduction mechanisms were investigated. The structures gained memristive behavior due to the oxygen vacancies displaced by the effect of annealing. As bipolar switching was observed in all memristor structures, the switching mechanism was identified as the valance change mechanism, in which conductivity is mostly provided by Poole–Frenkel and Schottky emission conduction mechanisms.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 8","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14536-1.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14536-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, pure BaSrTiO3 (BST) thin films and layered BST/TiO2 thin films were fabricated on Cr/SiO2/Si substrates for a possible fourth passive device in electronics called a memristor. Radio frequency- and high-power impulse magnetron sputtering-based reactive sputtering was used for the deposition of films. While analyzing the memristor behavior by IV-t measurement at room temperature, optical, structural, surface morphology, thermal annealing effect, and current conduction mechanisms were investigated. The structures gained memristive behavior due to the oxygen vacancies displaced by the effect of annealing. As bipolar switching was observed in all memristor structures, the switching mechanism was identified as the valance change mechanism, in which conductivity is mostly provided by Poole–Frenkel and Schottky emission conduction mechanisms.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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