Experimental analysis and low-damage machining strategy for composite ultrasonic vibration-assisted grinding of silicon carbide based on DA-MLP-NSGA-II algorithm

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-24 DOI:10.1016/j.mssp.2024.109146
Chenwei Dai , Qihui Cheng , Qing Miao , Zhen Yin , Ming Zhang , Jiajia Chen
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Abstract

At present, because of the lack of ultrasonic composite vibration assisted grinding mechanism, neural network optimization algorithm (NNOA) is used to optimize the processing results. In NNOA, multi-layer perceptron (MLP) neural network model and non-dominated sorting genetic algorithm-II (NSGA-II) are very efficient and accurate methods. In this paper, based on the measurement and analysis of the specific ultrasonic vibration device, the CUVAG experiments on silicon carbide (SiC) ceramic were carried out to investigate the influence of processing parameters on the grinding forces, the ground surface roughness and morphology, and the subsurface damage. Then, the brittle-ductile removal behavior of hard-and-brittle materials could be revealed according to the above analysis. After that, MLP model and NSGA-II were utilized to predict and optimize the processing results in CUVAG. The results show that the grinding forces are basically constant, the surface quality deteriorates, and the subsurface damage increases with increased axial vibration amplitude and workpiece infeed speed, but all fluctuate with enlarged wheel speed, and turns at the inflection point of brittle-ductile transition with increased elliptic vibration amplitude. The fitting goodness R2 of the established MLP neural network prediction model is between 0.94 and 0.975, and the process parameters calculated by the NSGA-II optimization algorithm are verified. With optimized processing parameters, the grinding forces are reduced by about 13 %, the surface roughness is reduced to Ra0.037 μm (by 29 %), and the depth of subsurface damage is reduced by 68 %.
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基于 DA-MLP-NSGA-II 算法的碳化硅复合超声振动辅助磨削实验分析和低损伤加工策略
目前,由于缺乏超声波复合振动辅助磨削机制,因此采用神经网络优化算法(NNOA)来优化加工结果。在 NNOA 中,多层感知器(MLP)神经网络模型和非支配排序遗传算法-II(NSGA-II)是非常高效和精确的方法。本文基于特定超声振动装置的测量和分析,对碳化硅(SiC)陶瓷进行了 CUVAG 实验,研究了加工参数对磨削力、磨削表面粗糙度和形貌以及表面下损伤的影响。然后,根据上述分析揭示了硬脆材料的脆-韧性去除行为。随后,利用 MLP 模型和 NSGA-II 对 CUVAG 的加工结果进行了预测和优化。结果表明,随着轴向振幅和工件进给速度的增加,磨削力基本不变,表面质量下降,表面下损伤增加,但随着砂轮速度的增大,磨削力有所波动,并随着椭圆振幅的增大在脆-韧性转变的拐点处出现转折。所建立的 MLP 神经网络预测模型的拟合优度 R2 在 0.94 至 0.975 之间,并验证了 NSGA-II 优化算法计算出的工艺参数。通过优化加工参数,磨削力降低了约 13%,表面粗糙度降低到 Ra0.037 μm(降低了 29%),表面下损伤深度降低了 68%。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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