High-performance AZO transparent electrodes with enhanced mechanical flexibility and conductivity through imbedding of Ag NWs

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-25 DOI:10.1007/s10854-024-13920-7
Jinke Bai, Chongdu Yu, Kangchun Tan, Shuai Shi, Lijun Song, Shihui Yu
{"title":"High-performance AZO transparent electrodes with enhanced mechanical flexibility and conductivity through imbedding of Ag NWs","authors":"Jinke Bai,&nbsp;Chongdu Yu,&nbsp;Kangchun Tan,&nbsp;Shuai Shi,&nbsp;Lijun Song,&nbsp;Shihui Yu","doi":"10.1007/s10854-024-13920-7","DOIUrl":null,"url":null,"abstract":"<div><p>The mechanical flexibility and conductivity of Al-doped ZnO thin films on flexible substrates are improved effectively via imbedding of silver nanowires (Ag NWs). The corresponding optical and electrical properties (before imbedding Ag NWs: 47.9 Ω/sq. at 85.1%, after imbedding Ag NWs: 14.7 Ω/sq. at 84.9%) indicate that the imbedding of Ag NW enables the preservation of high transparency and improvement of conductivity of AZO thin films. The resistance of AZO-Ag NW composites remains nearly constant after 2000 bending cycles at curvature radius of 8.0 mm, while the resistance of AZO thin films is increased significantly, which indicates the mechanical flexibility is enhanced by the Ag NWs. In addition, the resistance of the AZO-Ag NW composites is almost unchanged after experiencing strong oxidation and high corrosion tests. These results indicate that embedding of Ag NWs is a promising solution to solve critical problems of high resistance and brittle AZO thin films.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13920-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The mechanical flexibility and conductivity of Al-doped ZnO thin films on flexible substrates are improved effectively via imbedding of silver nanowires (Ag NWs). The corresponding optical and electrical properties (before imbedding Ag NWs: 47.9 Ω/sq. at 85.1%, after imbedding Ag NWs: 14.7 Ω/sq. at 84.9%) indicate that the imbedding of Ag NW enables the preservation of high transparency and improvement of conductivity of AZO thin films. The resistance of AZO-Ag NW composites remains nearly constant after 2000 bending cycles at curvature radius of 8.0 mm, while the resistance of AZO thin films is increased significantly, which indicates the mechanical flexibility is enhanced by the Ag NWs. In addition, the resistance of the AZO-Ag NW composites is almost unchanged after experiencing strong oxidation and high corrosion tests. These results indicate that embedding of Ag NWs is a promising solution to solve critical problems of high resistance and brittle AZO thin films.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
通过嵌入 Ag NWs 提高机械柔韧性和导电性的高性能 AZO 透明电极
通过嵌入银纳米线(Ag NWs),在柔性基底上的铝掺杂氧化锌薄膜的机械柔韧性和导电性得到了有效改善。相应的光学和电学特性(银纳米线嵌入前:47.9 Ω/sq:47.9 Ω/sq.(85.1%),银纳米线沉积后为 14.7 Ω/sq.(85.1%):14.7 Ω/sq.,导电率为 84.9%)表明,添加 Ag NW 能够保持 AZO 薄膜的高透明度并提高其导电率。在曲率半径为 8.0 mm 的条件下,AZO-Ag NW 复合材料经过 2000 次弯曲后,其电阻几乎保持不变,而 AZO 薄膜的电阻则显著增加,这表明 Ag NW 增强了机械柔韧性。此外,AZO-Ag NW 复合材料在经历强氧化和高腐蚀测试后,其电阻几乎没有变化。这些结果表明,嵌入 Ag NWs 是解决高电阻和脆性 AZO 薄膜关键问题的一种可行方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
期刊最新文献
Correction: Investigating the structural, morphological, electrical, and optical characteristics of β-Ga2O3 synthesized by solid-state combustion Microwave-assisted synthesis of Cu2ZnSnS4 and Cu2Zn0.5Ni0.5SnS4 nanoparticles for thin-film solar cells Moringa oleifera mediated MnO2 electrochemical sensor for ammonia detection in aqueous medium Biogenic synthesis of LaMnO3 perovskite nanoparticles: enhanced photocatalytic activity for water purification Rapid conduction of NiO-based ceramic resistors: the competitive relationship between electron–hole exchange and screening effect
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1