Microwave-assisted synthesis of Cu2ZnSnS4 and Cu2Zn0.5Ni0.5SnS4 nanoparticles for thin-film solar cells

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-02 DOI:10.1007/s10854-024-13956-9
Sahaya Dennish Babu George, Lavanya Narasimman, Karthikeyan Nagarajan, Rex Rosario Santhanaraj, Dhani Soren, Judith Jayarani Arockiasamy, Pushpalatha Durai, Shanmugam Veeramani
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Abstract

Quaternary chalcogenides doped with transition metals are currently being investigated due to their low toxicity and abundance in nature. These systems are especially well suited for thin-film solar cells applications due to their abundance in nature. In this study, we used the microwave-assisted solvothermal method to synthesize p-type quaternary semiconducting nanomaterials Cu2ZnSnS4 and Cu2Zn0.5Ni0.5SnS4 by using one-pot microwave-assisted solvothermal reactions which is treated at 180 – 200 °C (900W power) for 20 min in inside a domestic microwave oven. It was found that a wide range of structural parameters in the synthesized material could be characterized using X-ray diffraction methods, Raman spectral analysis, scanning electron microscopes (FESEM), energy-dispersive spectroscopy (EDS), transmission electron microscope (TEM), and UV–Vis spectrophotometers. It was found that the prepared material exhibited a kesterite crystal structure with crystallite sizes ranging from 20 to 40 nm. FESEM and TEM analysis exposes the morphological features and EDS analysis confirms stoichiometric ratio of the prepared nanomaterials. The optical absorption measurements showed that the nanostructures prepared had band gaps ranging from 1.58 eV to 1.45 eV, according to the optical absorption analysis. In order to finish the thin-film solar cell production process and to further investigate the properties of the CZTS and CZNTS layers, the following additional layers were deposited: CdS with chemical bath deposition; ZnO-Al with RF magnetron deposition; and, finally, Ni-Ag fingers as the front contact. Measurements were made of the thin-film solar cells' efficiency and properties, such as CZTS—3.10% and CZNTS—5.873%, respectively. The prepared materials and properties suggested that these two quaternary chalcogenide systems could be suitable low-cost solar absorber material for thin-film solar cells (TFSC) applications.

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微波辅助合成薄膜太阳能电池用Cu2ZnSnS4和Cu2Zn0.5Ni0.5SnS4纳米粒子
掺杂过渡金属的季硫族化合物由于其低毒性和丰富的性质,目前正在被研究。由于其丰富的性质,这些系统特别适合薄膜太阳能电池的应用。本研究采用微波辅助溶剂热法制备了p型季系半导体纳米材料Cu2ZnSnS4和Cu2Zn0.5Ni0.5SnS4,微波辅助溶剂热反应在家用微波炉中180 ~ 200℃(900W功率)下处理20 min。利用x射线衍射、拉曼光谱、扫描电子显微镜(FESEM)、能谱仪(EDS)、透射电子显微镜(TEM)和紫外可见分光光度计对合成材料进行了广泛的结构参数表征。结果表明,所制备的材料呈现出一种kesterite晶体结构,晶粒尺寸在20 ~ 40 nm之间。FESEM和TEM分析揭示了纳米材料的形态特征,EDS分析证实了纳米材料的化学计量比。光吸收分析表明,所制备的纳米结构的带隙在1.58 ~ 1.45 eV之间。为了完成薄膜太阳能电池的制备过程,并进一步研究CZTS和CZNTS层的性能,我们还沉积了以下附加层:化学浴沉积的CdS层;射频磁控管沉积ZnO-Al最后,Ni-Ag手指作为前触点。测试了CZTS-3.10%和CZNTS-5.873%薄膜太阳能电池的效率和性能。所制备的材料和性能表明,这两种季硫系化合物可以作为薄膜太阳能电池(TFSC)的低成本吸收材料。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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