Effects of Ga addition on the microstructure and mechanical performance of Sn-58Bi based alloys and the solder joints

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-26 DOI:10.1007/s10854-024-13936-z

Fusheng Li, Lei Xu, Mingze Chen, Fuwen Zhang, Zhigang Wang, Xixue Liu, Huijun He

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Abstract

In the research, 0.5 wt. % Ga were added in Sn-58Bi solder to investigate the effect of Ga addition on the microstructure and mechanical performance of Sn-58Bi based solders and corresponding solder joints. Elemental analysis of Ga-bearing bulk solder confirms the existence of solid solution Ga in β-Sn matrix and network α-Ga phase. The result of tensile test and post-test fracture surface analysis indicates that Ga addition improves the ultimate tensile strength, however, it depletes the plasticity by the precipitation of α-Ga phase with low melting point. With 0.5 wt. % Ga addition, the eutectic structure was much refined and the interfacial product changes from traditional scallop-like Cu₆Sn₅ layer to smooth Cu₉Ga₄ IMCs. In addition, the shear strength of Sn-58Bi solder joint was effectively improved by Ga addition due to the refinement strengthening of solder matrix and the improvement of interfacial IMC morphology. The shear fracture path changes from transgranular fracture in Cu₆Sn₅ layer to interfacial fracture between solder and Cu₉Ga₄ IMC layer.

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添加镓对锡-58铍基合金和焊点的微观结构和机械性能的影响

该研究在锡-58铋焊料中添加了 0.5 重量百分比的镓，以研究添加镓对锡-58铋基焊料及相应焊点的微观结构和机械性能的影响。含镓块状焊料的元素分析证实了在β-Sn基体和网络α-Ga相中存在固溶态镓。拉伸试验和试验后断裂面分析的结果表明，镓的加入提高了极限拉伸强度，但由于析出了熔点较低的α-镓相，降低了塑性。添加 0.5 wt. % Ga 后，共晶结构更加细化，界面产物从传统的扇贝状 Cu6Sn5 层变为光滑的 Cu9Ga4 IMC。此外，由于焊料基体的细化强化和界面 IMC 形态的改善，加入 Ga 后 Sn-58Bi 焊点的剪切强度得到了有效提高。剪切断裂路径从 Cu6Sn5 层的跨晶断裂变为焊料和 Cu9Ga4 IMC 层之间的界面断裂。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.