Lutu Sahoo, Shubhashree Sahoo, Subhashree Mishra, Nimai C. Nayak, B. N. Parida, R. K. Parida
{"title":"Structural, electrical, and multiferroic investigations of MgBiFeTiO6 double perovskite for possible optoelectronic applications","authors":"Lutu Sahoo, Shubhashree Sahoo, Subhashree Mishra, Nimai C. Nayak, B. N. Parida, R. K. Parida","doi":"10.1007/s10854-024-13867-9","DOIUrl":null,"url":null,"abstract":"<div><p>Solid-state synthesis process with a higher thermal treatment of optimized sintering temperature of 1000 °C was utilized to develop the MgBiFeTiO<sub>6</sub> (MBFTO) orthorhombic (A21am) single-phase polycrystalline ceramic oxide. The initial investigation by the XRD method suggests an Aurivillius-type compound like A<sub>m-1</sub>B<sub>m</sub>O<sub>3m</sub>, <i>m</i> = 5, while Rietveld analysis and tolerance factor (<i>τ</i> ~ 0.8) were also involved as an additional approximation tools to verify the structural formation. The SEM image confirmed a single-phase polycrystalline compound formation with av. grain size (~ 0.614 μm) is greater as compared to mean crystallites (~ 11 nm). The EDS spectra and elemental color mapping suggest the purity and uniform distribution of essential element over the surface of the sample. The ultraviolet–visible (UV–vis) absorbance spectra have a higher threshold wavelength (~ 630 nm) with a direct bandgap of ~ 2.36 eV suggesting better absorbance features in IR and visible radiation range, thus it can be utilized as a source material in photovoltaic and photocatalytic applications. The electrical and transport property was examined over 25–500 °C with a frequency sweeping 100–5 M Hz. The compound possesses an average ambient dielectric (~ 433) and low loss (~ 0.071) value at 1 kHz. The contribution of grains and grain barriers effect in semiconductance essence while an out of Debye-based relaxation mechanism that relies on the heat-dependent carrier mobility were verified as well. The material exhibited weak ferromagnetic behaviour and non-zero electric polarisation, with antiferromagnetic behaviour predominating. The outcomes of the examination suggest the present sample can be used in photocatalytic and dielectric material in suitable electronic equipments.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13867-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Solid-state synthesis process with a higher thermal treatment of optimized sintering temperature of 1000 °C was utilized to develop the MgBiFeTiO6 (MBFTO) orthorhombic (A21am) single-phase polycrystalline ceramic oxide. The initial investigation by the XRD method suggests an Aurivillius-type compound like Am-1BmO3m, m = 5, while Rietveld analysis and tolerance factor (τ ~ 0.8) were also involved as an additional approximation tools to verify the structural formation. The SEM image confirmed a single-phase polycrystalline compound formation with av. grain size (~ 0.614 μm) is greater as compared to mean crystallites (~ 11 nm). The EDS spectra and elemental color mapping suggest the purity and uniform distribution of essential element over the surface of the sample. The ultraviolet–visible (UV–vis) absorbance spectra have a higher threshold wavelength (~ 630 nm) with a direct bandgap of ~ 2.36 eV suggesting better absorbance features in IR and visible radiation range, thus it can be utilized as a source material in photovoltaic and photocatalytic applications. The electrical and transport property was examined over 25–500 °C with a frequency sweeping 100–5 M Hz. The compound possesses an average ambient dielectric (~ 433) and low loss (~ 0.071) value at 1 kHz. The contribution of grains and grain barriers effect in semiconductance essence while an out of Debye-based relaxation mechanism that relies on the heat-dependent carrier mobility were verified as well. The material exhibited weak ferromagnetic behaviour and non-zero electric polarisation, with antiferromagnetic behaviour predominating. The outcomes of the examination suggest the present sample can be used in photocatalytic and dielectric material in suitable electronic equipments.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.