{"title":"Microstructural characterization, electrical, and optical study of V2O5-doped Cr2O3 films for photonic applications","authors":"Adel M. El Sayed, Faisal Katib Alanazi","doi":"10.1007/s10854-024-13869-7","DOIUrl":null,"url":null,"abstract":"<div><p>The performance and optoelectronic properties of the transition metal (TM) oxide thin films can be enhanced by doping with other materials. In this study, V<sub>2</sub>O<sub>5</sub> nanoparticles (NPs) were prepared by sol–gel and then used to prepare V<sub>2</sub>O<sub>5</sub>-doped Cr<sub>2</sub>O<sub>3</sub> thin films using the spin-coating technique. The microstructural, morphological characterization, I–V measurements, and optical properties of the films were investigated. The XRD, FE-SEM, EDAX, and FTIR measurements revealed the polycrystalline nature, granular morphology, reduction in particle size (from 43 ± 2.58 nm to 21 ± 1.25 nm), crystallinity deterioration, and the limited stretching vibrations of Cr–O and Cr–O–Cr upon inclusion of V<sub>2</sub>O<sub>5</sub>. The doping didn’t alter the rhomoboedric corundum structure of Cr<sub>2</sub>O<sub>3</sub>. The films exhibited linear I–V behavior and their resistance decreased with doping. The films are highly transparent (up to 88%), and their absorption was minimal in the visible region. A new figure of merit was in the range of 0.255–0.270. The refractive index has bell-shaped behavior with the wavelength and increased with increasing V<sub>2</sub>O<sub>5</sub>. Additionally, the optical band gap (<i>E</i><sub>g</sub>) of the films decreased from 3.0 to 2.5 eV. The influences of 0.5–5.0% V<sub>2</sub>O<sub>5</sub> doping ratio on the grain size, dislocation density, microstrain, and charge carrier concentration were investigated. The finding of this study indicates that the optoelectronic features of V<sub>2</sub>O<sub>5</sub>-doped Cr<sub>2</sub>O<sub>3</sub> films were improved and the films can be used for various optoelectronic and photonic devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13869-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The performance and optoelectronic properties of the transition metal (TM) oxide thin films can be enhanced by doping with other materials. In this study, V2O5 nanoparticles (NPs) were prepared by sol–gel and then used to prepare V2O5-doped Cr2O3 thin films using the spin-coating technique. The microstructural, morphological characterization, I–V measurements, and optical properties of the films were investigated. The XRD, FE-SEM, EDAX, and FTIR measurements revealed the polycrystalline nature, granular morphology, reduction in particle size (from 43 ± 2.58 nm to 21 ± 1.25 nm), crystallinity deterioration, and the limited stretching vibrations of Cr–O and Cr–O–Cr upon inclusion of V2O5. The doping didn’t alter the rhomoboedric corundum structure of Cr2O3. The films exhibited linear I–V behavior and their resistance decreased with doping. The films are highly transparent (up to 88%), and their absorption was minimal in the visible region. A new figure of merit was in the range of 0.255–0.270. The refractive index has bell-shaped behavior with the wavelength and increased with increasing V2O5. Additionally, the optical band gap (Eg) of the films decreased from 3.0 to 2.5 eV. The influences of 0.5–5.0% V2O5 doping ratio on the grain size, dislocation density, microstrain, and charge carrier concentration were investigated. The finding of this study indicates that the optoelectronic features of V2O5-doped Cr2O3 films were improved and the films can be used for various optoelectronic and photonic devices.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.