Muhammad Sajid, Abdur Raheem, Muhammad Mudasser, Sidra Shujah, Muhammad Adil, Muhammad Nouman Khan, Sufaid Shah
{"title":"Controlled synthesis of Mn-doped ZnO nanoparticles for low-frequency Di-electric devices","authors":"Muhammad Sajid, Abdur Raheem, Muhammad Mudasser, Sidra Shujah, Muhammad Adil, Muhammad Nouman Khan, Sufaid Shah","doi":"10.1007/s10854-024-14034-w","DOIUrl":null,"url":null,"abstract":"<div><p>Transition metal oxide (TMOs) nanomaterials have gained remarkable attention due to their vast potential applications. In this study, a controlled facile synthesis route is applied for the preparation of manganese (Mn) doped ZnO nanoparticles (NPs) by varying Mn amount from 2 to 8%. X-ray diffractometry (XRD) analysis confirms a defect-free hexagonal wurtzite crystal structure. Transmission electron microscope (TEM) images reveal an increasing trend in the particle size from ~ 17 to ~ 34 nm with increasing Mn doping concentration. Similarly, UV–Vis spectroscopy shows an increase in the energy band gap from 2.91 to 3.33 eV with dopant concentrations. Electrical measurement confirms an increase in the dielectric constant which makes these materials efficient for low frequency devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 36","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14034-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Transition metal oxide (TMOs) nanomaterials have gained remarkable attention due to their vast potential applications. In this study, a controlled facile synthesis route is applied for the preparation of manganese (Mn) doped ZnO nanoparticles (NPs) by varying Mn amount from 2 to 8%. X-ray diffractometry (XRD) analysis confirms a defect-free hexagonal wurtzite crystal structure. Transmission electron microscope (TEM) images reveal an increasing trend in the particle size from ~ 17 to ~ 34 nm with increasing Mn doping concentration. Similarly, UV–Vis spectroscopy shows an increase in the energy band gap from 2.91 to 3.33 eV with dopant concentrations. Electrical measurement confirms an increase in the dielectric constant which makes these materials efficient for low frequency devices.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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