Investigation of dielectric and electrical behaviour of rare-earth doped chlorapatites synthesized via hydrothermal method based on liquid solid solution

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-01-07 DOI:10.1007/s10854-024-14155-2
Ritu Gupta, Arif Khan
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Abstract

In this paper the structural, dielectric and electrical conduction behaviour of Ca6-xNa2Y2(SiO4)6(Cl)2: xGd3+ (x = 0–0.05 mol%) chlorapatites prepared via hydrothermal process based on liquid–solid solution has been reported. The emergence of a monoclinic phase with P21/c space group is confirmed by x-ray diffraction (XRD) investigation. Space charge polarization is the predominant mechanism, according to dielectric studies that depend on frequency and temperature. Grain and grain boundary contributions to the thermally induced relaxation process are demonstrated using complex impedance spectroscopy. For all compositions, resistance of grain and grain boundaries exhibited negative temperature coefficient of resistance (NTCR) behaviour i.e., it decreases as temperature rises. The Nyquist plots indicated that the synthesized compounds appear non- Debye in nature. For all prepared compounds, the electrical modulus spectroscopy demonstrates that the electrical transport phenomenon occurs through both, short-range and long-range hopping of charge carriers. As frequency increases, the a. c. conductivity also increases, indicating that the compounds obey Jonscher’s power law.

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基于液固溶液的水热法制备稀土掺杂氯磷灰石的介电性能研究
本文报道了水热法制备的Ca6-xNa2Y2(SiO4)6(Cl)2: xGd3+ (x = 0-0.05 mol%)氯磷灰石的结构、介电和导电性。x射线衍射(XRD)证实了P21/c空间基单斜相的形成。根据对介电频率和温度的研究,空间电荷极化是主要的机制。晶粒和晶界对热诱导弛豫过程的贡献是用复阻抗谱证明的。对于所有成分,晶粒和晶界的电阻都表现出负的电阻温度系数(NTCR)行为,即随着温度的升高而降低。奈奎斯特图表明合成的化合物在性质上表现为非德拜。电模谱分析表明,在所制备的化合物中,电输运现象通过载流子的短程跳变和远距离跳变发生。随着频率的增加,交流电导率也增加,表明化合物服从琼舍尔幂定律。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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