Investigation of dielectric and electrical behaviour of rare-earth doped chlorapatites synthesized via hydrothermal method based on liquid solid solution
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引用次数: 0
Abstract
In this paper the structural, dielectric and electrical conduction behaviour of Ca6-xNa2Y2(SiO4)6(Cl)2: xGd3+ (x = 0–0.05 mol%) chlorapatites prepared via hydrothermal process based on liquid–solid solution has been reported. The emergence of a monoclinic phase with P21/c space group is confirmed by x-ray diffraction (XRD) investigation. Space charge polarization is the predominant mechanism, according to dielectric studies that depend on frequency and temperature. Grain and grain boundary contributions to the thermally induced relaxation process are demonstrated using complex impedance spectroscopy. For all compositions, resistance of grain and grain boundaries exhibited negative temperature coefficient of resistance (NTCR) behaviour i.e., it decreases as temperature rises. The Nyquist plots indicated that the synthesized compounds appear non- Debye in nature. For all prepared compounds, the electrical modulus spectroscopy demonstrates that the electrical transport phenomenon occurs through both, short-range and long-range hopping of charge carriers. As frequency increases, the a. c. conductivity also increases, indicating that the compounds obey Jonscher’s power law.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.