Kiyomitsu Shinsho, Natsumi Sugioka, Ayaka Yamazaki, Ema Sasaki, Go Okada, Weishan Chang, Yutaro Mori, Ayano Okubo, Toru Negishi, Yusuke Koba
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引用次数: 0
Abstract
The thermoluminescence (TL) properties and precise dose distribution measurement capabilities of Cr, Si, and Mg co-doped Al2O3 ceramics (Al2O3:Cr,Si,Mg) plates were investigated under X-ray irradiation. The co-doping of Si and Mg significantly enhanced the TL sensitivity, approximately doubling it compared to conventional Al2O3:Cr plates, due to the creation of new trapping levels. The TL dose response was proportional in the dose range of 0.5 to 5 Gy, and off-axis ratio (OAR) measurements confirmed the high spatial resolution and accuracy of the plates to reproduce the radiation distributions. This study is the first to evaluate TL plates of this size (200 × 200 mm2) that utilize Al2O3 as the host material, and demonstrate their significant potential for radiotherapy dosimetry systems. This significant contribution highlights the potential of Al2O3:Cr,Si,Mg ceramic plates to transform dosimetry systems for radiotherapy by providing a combination of high sensitivity, spatial resolution, and robustness. The results of this study lay the groundwork for the development and practical application of large-area TL imaging devices in medical dose verification.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.