Thermoluminescence glow curve study of UV-irradiated Mn4+doped zinc aluminate spinel nanophosphor

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-01-19 DOI:10.1007/s10854-025-14229-9
Vikas, Vikas Lahariya, Raunak Kumar Tamrakar, Suraj butolia
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Abstract

This paper is focused on thermoluminescence study of Mn4+-doped zinc aluminate nanophosphor with different Mn concentrations (0.5–3 mol %). The samples were chemically synthesized via microwave combustion method and annealed at 900 °C temperature. Nanoregime, single-phase spinel structure formation was confirmed by XRD and further analysed by Rietveld refinement method. The photoluminescence (PL) spectrum and PL decay curve revealed 745 nm emission under ultraviolet excitation wavelength, and afterglow decay time of the order of milliseconds. The thermoluminescence (TL) response was carried out using UV irradiation (254 nm) with different exposure time intervals. The effect of Mn concentration (0.5–3 mol %) and UV exposure time on TL glow curve of zinc aluminate was presented and discussed. A broad TL peak with 40 min UV irradiation exposure time was observed. Progression in TL intensity was observed with Mn concentration from 0.5 to 2% and above 2 mol %, and TL intensity was quenched. Also, a noticeable TL peak shifting was found for higher Mn4+ ions concentration. The optimum TL peak corresponding to 40 min exposure time (for 2 mol % Mn) was deconvoluted into two peaks at 395 K and 422 K temperature. The prepared ZnAl2O4:Mn4+ (2 mol %) nanophosphor showed linear dose response, essential property of dosimeters. The assessment of trap creation and trap depth was analysed by calculating the trap parameters. Two different methods, computerized glow curve deconvolution (CGCD) and Chen’s peak shape (CPS) method, were applied to calculate various kinetic TL parameters, e.g. order of kinetics (b), trap depth (activation energy Eav), and frequency factor (S). The measured trap depth suggested the involvement of shallow trap states for recombination process. This study will be immensely helpful in understanding the thermoluminescence behaviour of Mn4+-doped zinc aluminate nanophosphor for UV-TLD applications.

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Mn4+掺杂铝酸锌尖晶石纳米荧光粉的热释光曲线研究
本文主要研究了不同Mn浓度(0.5 ~ 3mol %)掺杂Mn4+的铝酸锌纳米荧光粉的热致发光性能。采用微波燃烧法合成样品,并在900℃下退火。XRD证实了纳米晶、单相尖晶石结构的形成,并用Rietveld细化法进一步分析。光致发光(PL)光谱和PL衰减曲线显示在紫外激发波长下发射745 nm,余辉衰减时间为毫秒数量级。采用不同曝光时间间隔的紫外线照射(254 nm)进行热释光(TL)响应。讨论了Mn浓度(0.5 ~ 3mol %)和紫外照射时间对铝酸锌发光曲线的影响。紫外照射时间为40 min时,观察到宽TL峰。当Mn浓度在0.5 ~ 2%及2mol %以上时,TL强度呈递增趋势,并对TL强度进行淬火处理。Mn4+浓度越高,TL峰移越明显。在395 K和422 K温度下,暴露时间为40 min (2 mol % Mn)的最佳TL峰解卷积成两个峰。制备的ZnAl2O4:Mn4+ (2mol %)纳米荧光粉具有线性剂量响应,是剂量计的基本性质。通过圈闭参数的计算,分析了圈闭形成和圈闭深度的评价。采用计算机化辉光曲线反褶积(CGCD)和陈峰形(CPS)两种不同的方法计算了各种动力学TL参数,如动力学阶数(b)、陷阱深度(活化能Eav)和频率因子(S)。测量的陷阱深度表明浅陷阱状态参与了重组过程。该研究将极大地有助于理解Mn4+掺杂铝酸锌纳米荧光粉在UV-TLD应用中的热释光行为。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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