Wide range rectifier using Ge-based IT-FinFET for 2.45 GHz microwave wireless power transmission

Abstract

This paper proposes and designs a composite device, the Ge-based IT-FinFET, which integrates FinFET and SOI MOSFET structures. The device features strong gate control and high driving current capabilities, enabling efficient rectification over a wide range, with promising applications in the field of microwave wireless power transfer. Considering the complex and multifaceted effects caused by variations in the structural parameters of the composite device, this study incorporates multiple critical device parameters, including transfer characteristics and the on/off current ratio, to comprehensively evaluate their impact on electrical performance. The optimal structural parameters for rectification applications are determined through detailed analysis. Simulation results demonstrate that the proposed IT-FinFET achieves efficient rectification over a wide input power range from −20 dBm to 42 dBm, spanning a total range of 62 dBm. Notably, 61 % of the power range achieves rectification efficiencies exceeding 30 %, extending the range by 20 dBm compared to Si-based MOSFET. Furthermore, a range of 13 dBm achieves rectification efficiencies exceeding 50 %, over three times wider than that of Si-based MOSFET. These results underscore the capability of the proposed IT-FinFET to achieve efficient rectification across a broad range of input power levels.