Electrical properties of high-entropy oxides (La0.2Ba0.2Cu0.2Sn0.2Ni0.2)3O4

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-13 DOI:10.1007/s10854-025-14345-6
Zheng Chen, Junxin Hou, Xiangwei Jin, Lingxia Zheng, Fenghua Liu, Zhixiang Li
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Abstract

The utilization of the high-entropy effect and the cocktail effect in high-entropy oxides has significantly expanded the horizon for material design and performance enhancement. Consequently, the fabrication of high-entropy oxides has emerged as a focal point of recent research. High-entropy oxides that serve as cathode materials for battery electrodes must exhibit high electrical conductivity. In this study, a high-entropy oxide (La0.2Ba0.2Cu0.2Sn0.2Ni0.2)3O4 was synthesized using the high-temperature solid-state reaction method. A systematic investigation was conducted to analyze the impact of varying sintering temperatures on the phase structure and electrical properties of the material. The findings indicate that the high-entropy oxide under study possesses commendable electrical conductivity. The electrical conductivity of the material was observed to increase initially and then decrease with the elevation of sintering temperature. Optimal electrical conductivity was achieved at a sintering temperature of 1280 °C. The temperature-dependent electrical conductivity of the sample was found to increase initially and then decrease, with a nominal conductivity of 20.062 S·cm−1 at 25 °C, and a stepwise increase to 30.06 S·cm−1 at 250 °C. This material holds promising potential for applications in energy, electronics, and catalysis sectors.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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