Visible-light responsive Z-scheme Ti3C2 MXene/In2S3/CeO2 heterojunction for enhanced photocatalytic water purification

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-02-14 DOI:10.1016/j.mssp.2025.109379
Jingbo Ni , Vittorio Boffa , Klaus Westphal , Deyong Wang , Peter Kjær Kristensen , Paola Calza
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Abstract

Sun-driven photocatalysis has emerged as a promising and sustainable approach for the degradation of organic pollutants in water, offering a green solution to the global challenge of clean water for everybody. The efficiency of this process is largely determined by advanced photocatalysts. Semiconductor-based heterojunctions play a crucial role by facilitating rapid charge transfer, acting as electron mediators for redox reactions, and accelerating photocatalytic activity through synergistic effects. In this study, we successfully fabricated a novel Ti3C2 MXene/In2S3/CeO2 (TMIC) Z-scheme heterojunction using a simple in situ synthesis and deposition method. Initially, we determined that the optimal ratio of CeO2 to In2S3 was 15 %. After incorporating Ti3C2 MXene, electro-optical measurements, and catalytic activity tests indicated that the Ti3C2 MXene0.0025/In2S3/CeO2 (TM0.025IC-15 %) heterojunction exhibited the optimal photodegradation performance, degrading over 92 % of methyl orange within 60 min and 99.7 % of diclofenac within 180 min. This performance was superior to both the individual components and other reported heterojunctions. Additionally, the TMIC heterojunction demonstrated excellent stability under our testing conditions and maintained satisfactory activity in a real municipal wastewater treatment plant effluent. This research presents a novel approach to advancing Z-scheme heterojunction photocatalyst design, demonstrating significant potential for practical wastewater treatment.
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Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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