Visible-light responsive Z-scheme Ti3C2 MXene/In2S3/CeO2 heterojunction for enhanced photocatalytic water purification

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-06-01 Epub Date: 2025-02-14 DOI:10.1016/j.mssp.2025.109379
Jingbo Ni , Vittorio Boffa , Klaus Westphal , Deyong Wang , Peter Kjær Kristensen , Paola Calza
{"title":"Visible-light responsive Z-scheme Ti3C2 MXene/In2S3/CeO2 heterojunction for enhanced photocatalytic water purification","authors":"Jingbo Ni ,&nbsp;Vittorio Boffa ,&nbsp;Klaus Westphal ,&nbsp;Deyong Wang ,&nbsp;Peter Kjær Kristensen ,&nbsp;Paola Calza","doi":"10.1016/j.mssp.2025.109379","DOIUrl":null,"url":null,"abstract":"<div><div>Sun-driven photocatalysis has emerged as a promising and sustainable approach for the degradation of organic pollutants in water, offering a green solution to the global challenge of clean water for everybody. The efficiency of this process is largely determined by advanced photocatalysts. Semiconductor-based heterojunctions play a crucial role by facilitating rapid charge transfer, acting as electron mediators for redox reactions, and accelerating photocatalytic activity through synergistic effects. In this study, we successfully fabricated a novel Ti<sub>3</sub>C<sub>2</sub> MXene/In<sub>2</sub>S<sub>3</sub>/CeO<sub>2</sub> (TMIC) Z-scheme heterojunction using a simple in situ synthesis and deposition method. Initially, we determined that the optimal ratio of CeO<sub>2</sub> to In<sub>2</sub>S<sub>3</sub> was 15 %. After incorporating Ti<sub>3</sub>C<sub>2</sub> MXene, electro-optical measurements, and catalytic activity tests indicated that the Ti<sub>3</sub>C<sub>2</sub> MXene<sub>0.0025</sub>/In<sub>2</sub>S<sub>3</sub>/CeO<sub>2</sub> (TM<sub>0.025</sub>IC-15 %) heterojunction exhibited the optimal photodegradation performance, degrading over 92 % of methyl orange within 60 min and 99.7 % of diclofenac within 180 min. This performance was superior to both the individual components and other reported heterojunctions. Additionally, the TMIC heterojunction demonstrated excellent stability under our testing conditions and maintained satisfactory activity in a real municipal wastewater treatment plant effluent. This research presents a novel approach to advancing Z-scheme heterojunction photocatalyst design, demonstrating significant potential for practical wastewater treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109379"},"PeriodicalIF":4.6000,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125001167","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/2/14 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Sun-driven photocatalysis has emerged as a promising and sustainable approach for the degradation of organic pollutants in water, offering a green solution to the global challenge of clean water for everybody. The efficiency of this process is largely determined by advanced photocatalysts. Semiconductor-based heterojunctions play a crucial role by facilitating rapid charge transfer, acting as electron mediators for redox reactions, and accelerating photocatalytic activity through synergistic effects. In this study, we successfully fabricated a novel Ti3C2 MXene/In2S3/CeO2 (TMIC) Z-scheme heterojunction using a simple in situ synthesis and deposition method. Initially, we determined that the optimal ratio of CeO2 to In2S3 was 15 %. After incorporating Ti3C2 MXene, electro-optical measurements, and catalytic activity tests indicated that the Ti3C2 MXene0.0025/In2S3/CeO2 (TM0.025IC-15 %) heterojunction exhibited the optimal photodegradation performance, degrading over 92 % of methyl orange within 60 min and 99.7 % of diclofenac within 180 min. This performance was superior to both the individual components and other reported heterojunctions. Additionally, the TMIC heterojunction demonstrated excellent stability under our testing conditions and maintained satisfactory activity in a real municipal wastewater treatment plant effluent. This research presents a novel approach to advancing Z-scheme heterojunction photocatalyst design, demonstrating significant potential for practical wastewater treatment.
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可见光响应Z-scheme Ti3C2 MXene/In2S3/CeO2异质结增强光催化水净化
太阳驱动的光催化已经成为降解水中有机污染物的一种有前途和可持续的方法,为每个人提供清洁水的全球挑战提供了绿色解决方案。这一过程的效率很大程度上取决于先进的光催化剂。半导体异质结通过促进快速电荷转移,作为氧化还原反应的电子介质,以及通过协同效应加速光催化活性发挥着至关重要的作用。在这项研究中,我们成功地用简单的原位合成和沉积方法制备了一种新的Ti3C2 MXene/In2S3/CeO2 (TMIC) Z-scheme异质结。最初,我们确定CeO2与In2S3的最佳比例为15%。在加入Ti3C2 MXene后,电光测量和催化活性测试表明,Ti3C2 MXene0.0025/In2S3/CeO2 (tm0.025 ic - 15%)异质结具有最佳的光降解性能,在60 min内降解92%的甲基橙,在180 min内降解99.7%的双氯芬酸,这一性能优于单个组分和其他报道的异质结。此外,TMIC异质结在我们的测试条件下表现出优异的稳定性,并在实际的城市污水处理厂流出物中保持令人满意的活性。本研究提出了一种推进z型异质结光催化剂设计的新方法,在实际废水处理中显示出巨大的潜力。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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