{"title":"Enhanced dielectric properties of PFBA@rGO/PVDF-HFP flexible films by non-covalent modification for energy harvesting applications","authors":"Bingwei Chen, Zhihao Wang, Wangshu Tong, Shengqian Wang, Yanan Li, Yihe Zhang","doi":"10.1007/s10854-025-14377-y","DOIUrl":null,"url":null,"abstract":"<div><p>Dielectric modulation of triboelectric materials has proven to be a viable approach for enhancing triboelectric nanogenerator (TENG) performance. Nevertheless, the construction of high dielectric composites with optimal interfacial compatibility and exceptional performance is a matter of immediate concern. Graphene oxide (rGO) was modified with pentafluorobenzoic acid (PFBA) to synthesize PFBA@rGO/PVDF-HFP composite films via the casting method. A mass fraction of 5 wt% PFBA@rGO results in a dielectric constant of 211 at a frequency of 40 Hz, which is 15 times greater than that of the pure PVDF-HFP film. Furthermore, the dielectric loss remains low at 0.7. The modification created a stable molecular interface between PVDF-HFP and rGO, improving the compatibility between the rGO filler and PVDF-HFP matrix. This interfacial polarization significantly boosted the composites’ dielectric constant, enabling PFBA@rGO in PVDF-HFP to react flexibly to external electric fields. The TENG with 5 wt% PFBA@rGO/PVDF-HFP achieves a maximum open-circuit voltage of 70 V, which is double that observed for pure PVDF-HFP. This enhancement results from the material’s high dielectric properties, which increase surface charge density. The TENG can light 69 LED bulbs and charge a 3.3 μF capacitor to 5 V in less than a minute. This study provides new insights into the unique potential of the dielectric-modulated output enhancement strategy for TENG in energy harvesting.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14377-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Dielectric modulation of triboelectric materials has proven to be a viable approach for enhancing triboelectric nanogenerator (TENG) performance. Nevertheless, the construction of high dielectric composites with optimal interfacial compatibility and exceptional performance is a matter of immediate concern. Graphene oxide (rGO) was modified with pentafluorobenzoic acid (PFBA) to synthesize PFBA@rGO/PVDF-HFP composite films via the casting method. A mass fraction of 5 wt% PFBA@rGO results in a dielectric constant of 211 at a frequency of 40 Hz, which is 15 times greater than that of the pure PVDF-HFP film. Furthermore, the dielectric loss remains low at 0.7. The modification created a stable molecular interface between PVDF-HFP and rGO, improving the compatibility between the rGO filler and PVDF-HFP matrix. This interfacial polarization significantly boosted the composites’ dielectric constant, enabling PFBA@rGO in PVDF-HFP to react flexibly to external electric fields. The TENG with 5 wt% PFBA@rGO/PVDF-HFP achieves a maximum open-circuit voltage of 70 V, which is double that observed for pure PVDF-HFP. This enhancement results from the material’s high dielectric properties, which increase surface charge density. The TENG can light 69 LED bulbs and charge a 3.3 μF capacitor to 5 V in less than a minute. This study provides new insights into the unique potential of the dielectric-modulated output enhancement strategy for TENG in energy harvesting.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.