Enhanced dielectric properties of PFBA@rGO/PVDF-HFP flexible films by non-covalent modification for energy harvesting applications

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-14 DOI:10.1007/s10854-025-14377-y
Bingwei Chen, Zhihao Wang, Wangshu Tong, Shengqian Wang, Yanan Li, Yihe Zhang
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Abstract

Dielectric modulation of triboelectric materials has proven to be a viable approach for enhancing triboelectric nanogenerator (TENG) performance. Nevertheless, the construction of high dielectric composites with optimal interfacial compatibility and exceptional performance is a matter of immediate concern. Graphene oxide (rGO) was modified with pentafluorobenzoic acid (PFBA) to synthesize PFBA@rGO/PVDF-HFP composite films via the casting method. A mass fraction of 5 wt% PFBA@rGO results in a dielectric constant of 211 at a frequency of 40 Hz, which is 15 times greater than that of the pure PVDF-HFP film. Furthermore, the dielectric loss remains low at 0.7. The modification created a stable molecular interface between PVDF-HFP and rGO, improving the compatibility between the rGO filler and PVDF-HFP matrix. This interfacial polarization significantly boosted the composites’ dielectric constant, enabling PFBA@rGO in PVDF-HFP to react flexibly to external electric fields. The TENG with 5 wt% PFBA@rGO/PVDF-HFP achieves a maximum open-circuit voltage of 70 V, which is double that observed for pure PVDF-HFP. This enhancement results from the material’s high dielectric properties, which increase surface charge density. The TENG can light 69 LED bulbs and charge a 3.3 μF capacitor to 5 V in less than a minute. This study provides new insights into the unique potential of the dielectric-modulated output enhancement strategy for TENG in energy harvesting.

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利用非共价改性技术增强PFBA@rGO/PVDF-HFP柔性薄膜的介电性能
摩擦电材料的介电调制已被证明是提高摩擦电纳米发电机(TENG)性能的可行方法。然而,构建具有最佳界面相容性和卓越性能的高介电复合材料是一个迫在眉睫的问题。用五氟苯甲酸(PFBA)对氧化石墨烯(rGO)进行改性,通过铸造法制备PFBA@rGO/PVDF-HFP复合薄膜。质量分数为5wt % PFBA@rGO时,在40hz频率下的介电常数为211,是纯PVDF-HFP薄膜的15倍。此外,介质损耗保持在0.7的低水平。该修饰在PVDF-HFP和rGO之间建立了稳定的分子界面,提高了rGO填料与PVDF-HFP基质之间的相容性。这种界面极化显著提高了复合材料的介电常数,使PVDF-HFP中的PFBA@rGO能够灵活地对外部电场做出反应。具有5 wt% PFBA@rGO/PVDF-HFP的TENG实现了70 V的最大开路电压,这是纯PVDF-HFP的两倍。这种增强是由于材料的高介电特性,这增加了表面电荷密度。TENG可以点亮69个LED灯泡,并在不到一分钟的时间内将3.3 μF的电容器充电到5 V。本研究为电介质调制输出增强策略在能量收集中的独特潜力提供了新的见解。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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