Unlocking Ta₂C MXene through first principle study: How vacuum thickness shapes its electronic, optical and thermodynamic marvels

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-06-01 Epub Date: 2025-02-16 DOI:10.1016/j.mssp.2025.109384
Shabir Ali , Xinhua Wang , Muhammad Khan , Nasir A. Ibrahim , Nosiba S. Badher , Mohammed Saad Aleissa , Mohamed Hassan Eisa , Vajid Nettoor Veettil
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Abstract

This article presents a comprehensive and innovative investigation into the influence of vacuum thickness on the electronic, optical, and thermodynamic properties of two-dimensional (2D) Ta₂C MXene using advanced first-principles simulations. As MXenes emerge as front-runners in various high-impact industrial applications, understanding the nuances of their properties is paramount. Our findings reveal that vacuum thickness significantly affects the electronic characteristics of Ta₂C MXene. Additionally, our detailed analysis of optical properties including dielectric function, reflectivity, refractive index, and extinction coefficient demonstrates a consistent enhancement in these parameters with increasing vacuum thickness, underscoring the tunability of Ta₂C MXene for specific optical applications. Furthermore, variations in vacuum thickness leads to significant changes in thermodynamic properties under different temperature conditions. This research not only deepens our understanding of Ta₂C MXene but also provides pivotal insights for the development of next-generation technologies, solidifying the role of vacuum engineering in optimizing MXene-based materials for energy storage devices.
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通过第一性原理研究解锁Ta₂C MXene:真空厚度如何塑造其电子,光学和热力学奇迹
本文采用先进的第一性原理模拟,对真空厚度对二维(2D) Ta₂C MXene的电子、光学和热力学性质的影响进行了全面和创新的研究。随着MXenes在各种高影响力的工业应用中成为领跑者,了解其特性的细微差别至关重要。研究结果表明,真空厚度对Ta₂C MXene的电子特性有显著影响。此外,我们对包括介电函数、反射率、折射率和消光系数在内的光学特性的详细分析表明,随着真空厚度的增加,这些参数都有一致的增强,强调了Ta₂C MXene在特定光学应用中的可调性。此外,真空厚度的变化导致了不同温度条件下热力学性质的显著变化。这项研究不仅加深了我们对Ta₂C MXene的理解,而且为下一代技术的发展提供了关键的见解,巩固了真空工程在优化MXene储能设备材料中的作用。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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