Vrushali E. Kalokhe, Abha Mahajan, Sanju Rani, Rupali Nagar
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引用次数: 0
Abstract
This study focuses on the multi-phasic iron oxide nanorods (IONRs) and evaluates their performance as photodetectors operational in broad spectrum ranging from UV to visible light. The IONRs were synthesized using a wet chemical co-precipitation (COP) method under varying reaction conditions that resulted in multi-phases of iron oxide. While sample labeled as COP1 consisted of mixed phases of α-FeOOH/α-Fe2O3/γ-FeOOH, the one labeled as COP2 showed ε-Fe2O3/γ-Fe2O3. Optical studies confirmed distinct energy bandgaps for IONRs samples. Transmission Electron Microscopy (TEM) showed a reduction in nanorod length from 60 \(\pm\) 8 (COP1) to 14 \(\pm\) 3 nm (COP2) and diameter from 5 \(\pm\) 0.5 nm to 3 \(\pm\) 0.5 nm. As-synthesized powder was cast as thin film on the screen-printed electrodes to measure photocurrent under UV and visible light illumination. Both the samples exhibited quick photoresponse under UV light illumination at a low bias voltage of 0.5 V, whereas the COP2 sample responded to visible light also. The synthesis of multi-phasic IONRs via a modified wet chemical method adds a versatile approach for altering their properties for enhanced photodetection applications and broadening the detection range.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.