{"title":"Effects of CaZrO3 doping on the oxygen vacancy formation and dielectric properties of BaTiO3 ceramics sintered in a reducing atmosphere","authors":"Hsuan-Jung Hsu, Kai Hsun Yang, Hsing-I Hsiang","doi":"10.1007/s10854-025-14392-z","DOIUrl":null,"url":null,"abstract":"<div><p>This study investigates the role of CaZrO<sub>3</sub> doping in suppressing oxygen vacancies and enhancing the dielectric properties of BaTiO<sub>3</sub> ceramics sintered in reducing atmospheres, a critical challenge for base-metal electrode multilayer ceramic capacitors (BME-MLCCs). Advanced characterization techniques, including X-ray photoelectron spectroscopy (XPS) and impedance spectroscopy, reveal that CaZrO<sub>3</sub> doping significantly reduces oxygen vacancy concentrations and Ti<sup>3+</sup> formation, mitigating defect-induced leakage currents. The optimized doping level (4-mol% CaZrO<sub>3</sub>) promotes the formation of a core–shell microstructure, stabilizing the dielectric properties while achieving a high insulation resistivity and maintaining a dielectric constant of ~ 1900. These findings demonstrate that CaZrO<sub>3</sub> not only shifts the Curie temperature but also enhances long-term reliability and operational stability under reducing conditions. This study addresses critical gaps in existing research by providing a comprehensive understanding of defect suppression mechanisms and offering practical solutions for advancing high-reliability BME-MLCCs.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14392-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study investigates the role of CaZrO3 doping in suppressing oxygen vacancies and enhancing the dielectric properties of BaTiO3 ceramics sintered in reducing atmospheres, a critical challenge for base-metal electrode multilayer ceramic capacitors (BME-MLCCs). Advanced characterization techniques, including X-ray photoelectron spectroscopy (XPS) and impedance spectroscopy, reveal that CaZrO3 doping significantly reduces oxygen vacancy concentrations and Ti3+ formation, mitigating defect-induced leakage currents. The optimized doping level (4-mol% CaZrO3) promotes the formation of a core–shell microstructure, stabilizing the dielectric properties while achieving a high insulation resistivity and maintaining a dielectric constant of ~ 1900. These findings demonstrate that CaZrO3 not only shifts the Curie temperature but also enhances long-term reliability and operational stability under reducing conditions. This study addresses critical gaps in existing research by providing a comprehensive understanding of defect suppression mechanisms and offering practical solutions for advancing high-reliability BME-MLCCs.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.