Tailoring the structural, conductivity, and magnetic properties of La2Ni1−xCrxMnO6 double perovskites by B-site Cr substitution

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-16 DOI:10.1007/s10854-025-14370-5
Amit Hooda, Neelam Hooda, Reena Sharma, Mahendra Singh Rathore
{"title":"Tailoring the structural, conductivity, and magnetic properties of La2Ni1−xCrxMnO6 double perovskites by B-site Cr substitution","authors":"Amit Hooda,&nbsp;Neelam Hooda,&nbsp;Reena Sharma,&nbsp;Mahendra Singh Rathore","doi":"10.1007/s10854-025-14370-5","DOIUrl":null,"url":null,"abstract":"<div><p>Double perovskite ceramics, La<sub>2</sub>Ni<sub>1−<i>x</i></sub>Cr<sub><i>x</i></sub>MnO<sub>6</sub>; (<i>x</i> = 0.2, 0.5, 0.8, 1.0) were developed using the sol–gel method. X-ray diffraction (XRD) and Rietveld refinement revealed the presence of rhombohedral and orthorhombic phases in addition to the main monoclinic structure, indicating the existence of disorder within the samples. The degree of disorder decreased with increasing chromium (Cr) substitution, with pure La<sub>2</sub>CrMnO<sub>6</sub> exhibiting the highest order (approximately 99.70%). DC conductivity (<i>σ</i><sub>dc</sub>) and magnetization strongly depend on the degree of antisite disorder. The sample with <i>x</i> = 0.2 composition attained the highest DC conductivity (<i>σ</i><sub>dc</sub> = 8.023 × 10<sup>–2</sup> S/m) and saturation magnetization (<i>M</i><sub>s</sub> = 51.89 emu/g). <i>M</i><sub>s</sub> showed a decreasing trend upon increasing Cr substitution. The observed hysteresis loops at ± 60 kOe revealed antiferromagnetic interactions in addition to the primary ferromagnetic phase. Various possible mechanisms were discussed in detail to understand the impact of Cr substitution on the structure, electrical conductivity, and magnetic properties in La<sub>2</sub>Ni<sub>1−<i>x</i></sub>Cr<sub><i>x</i></sub>MnO<sub>6</sub> double perovskite compounds.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14370-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Double perovskite ceramics, La2Ni1−xCrxMnO6; (x = 0.2, 0.5, 0.8, 1.0) were developed using the sol–gel method. X-ray diffraction (XRD) and Rietveld refinement revealed the presence of rhombohedral and orthorhombic phases in addition to the main monoclinic structure, indicating the existence of disorder within the samples. The degree of disorder decreased with increasing chromium (Cr) substitution, with pure La2CrMnO6 exhibiting the highest order (approximately 99.70%). DC conductivity (σdc) and magnetization strongly depend on the degree of antisite disorder. The sample with x = 0.2 composition attained the highest DC conductivity (σdc = 8.023 × 10–2 S/m) and saturation magnetization (Ms = 51.89 emu/g). Ms showed a decreasing trend upon increasing Cr substitution. The observed hysteresis loops at ± 60 kOe revealed antiferromagnetic interactions in addition to the primary ferromagnetic phase. Various possible mechanisms were discussed in detail to understand the impact of Cr substitution on the structure, electrical conductivity, and magnetic properties in La2Ni1−xCrxMnO6 double perovskite compounds.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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