Ni-doped SnO2 nanoparticles: Structural insights and magnetic behavior via X-ray absorption spectroscopy

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-02-26 DOI:10.1016/j.mssp.2025.109415
Vaishnavi K. Mohan , Chithira P. R , Abharana N , S.N. Jha , Dibyendu Bhattacharyya , Teny Theresa John
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Abstract

This study investigates the effect of Ni dopant on the electronic structure and magnetic properties of SnO2 nanoparticles. By employing Sn and Ni-K edge X-ray absorption spectroscopy (XAS), we examined the variations in the local structure induced by Ni doping. Our results demonstrate that when Ni atoms replace Sn, it results in the creation of numerous oxygen vacancies (Ov). Similar spectral behavior of the samples, with respect to SnO2, in Sn-K edge X-ray Absorption Near Edge Structure (XANES) indicates successful incorporation of Ni ions into SnO2 lattice without causing structural deformation. The position of the white-line in the Ni-K edge XANES confirms the absence of Ni clusters or NiO, indicating the observed Room-Temperature Ferromagnetism (RTFM) is not due to magnetic Ni species. Extended X-ray absorption Fine Structure (EXAFS) analysis shows changes in coordination numbers (CN) post-doping, suggesting emergence of Ov, while the similarity in bond-lengths (R) confirms the substitution of Sn by Ni atoms in the SnO2 matrix. Moreover, the weak ferromagnetism (FM) observed in the undoped sample indicates intrinsic defects within the sample, whereas the enhanced RTFM in Ni-doped sample is attributed to a synergistic effect of both Ov and the dopant atoms. This can be explained by the formation of Bound Magnetic Polarons (BMP). A good fit to the spin wave model in the higher temperature range (150–300 K) further supports the role of Ni doping in the observed RTFM.

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Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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