Ni-doped SnO2 nanoparticles: Structural insights and magnetic behavior via X-ray absorption spectroscopy

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-06-15 Epub Date: 2025-02-26 DOI:10.1016/j.mssp.2025.109415
Vaishnavi K. Mohan , Chithira P. R , Abharana N , S.N. Jha , Dibyendu Bhattacharyya , Teny Theresa John
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Abstract

This study investigates the effect of Ni dopant on the electronic structure and magnetic properties of SnO2 nanoparticles. By employing Sn and Ni-K edge X-ray absorption spectroscopy (XAS), we examined the variations in the local structure induced by Ni doping. Our results demonstrate that when Ni atoms replace Sn, it results in the creation of numerous oxygen vacancies (Ov). Similar spectral behavior of the samples, with respect to SnO2, in Sn-K edge X-ray Absorption Near Edge Structure (XANES) indicates successful incorporation of Ni ions into SnO2 lattice without causing structural deformation. The position of the white-line in the Ni-K edge XANES confirms the absence of Ni clusters or NiO, indicating the observed Room-Temperature Ferromagnetism (RTFM) is not due to magnetic Ni species. Extended X-ray absorption Fine Structure (EXAFS) analysis shows changes in coordination numbers (CN) post-doping, suggesting emergence of Ov, while the similarity in bond-lengths (R) confirms the substitution of Sn by Ni atoms in the SnO2 matrix. Moreover, the weak ferromagnetism (FM) observed in the undoped sample indicates intrinsic defects within the sample, whereas the enhanced RTFM in Ni-doped sample is attributed to a synergistic effect of both Ov and the dopant atoms. This can be explained by the formation of Bound Magnetic Polarons (BMP). A good fit to the spin wave model in the higher temperature range (150–300 K) further supports the role of Ni doping in the observed RTFM.

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镍掺杂SnO2纳米粒子:通过x射线吸收光谱的结构洞察和磁性行为
研究了Ni掺杂物对SnO2纳米粒子电子结构和磁性能的影响。利用Sn和Ni- k边缘x射线吸收光谱(XAS)研究了Ni掺杂引起的局部结构变化。我们的研究结果表明,当Ni原子取代Sn时,会产生大量的氧空位(Ov)。在Sn-K边缘x射线吸收近边缘结构(XANES)中,样品相对于SnO2具有相似的光谱行为,表明Ni离子成功地结合到SnO2晶格中而没有引起结构变形。在Ni- k边缘的XANES中,白线的位置证实了Ni簇或NiO的缺失,表明观察到的室温铁磁性(RTFM)不是由磁性Ni种引起的。扩展x射线吸收精细结构(EXAFS)分析表明,掺杂后配位数(CN)发生了变化,表明出现了Ov,而键长(R)的相似性证实了SnO2基体中Sn被Ni原子取代。此外,在未掺杂样品中观察到的弱铁磁性(FM)表明样品内部存在固有缺陷,而在ni掺杂样品中观察到的增强的RTFM归因于Ov和掺杂原子的协同效应。这可以用束缚磁极化子(BMP)的形成来解释。在较高温度范围内(150-300 K)与自旋波模型的良好拟合进一步支持了Ni掺杂在观察到的RTFM中的作用。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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