Temperature-Insensitive On-Chip Resistors for Linear Voltage-To-Current Conversion in Low-Power Voltage and Current References

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-03-06 DOI:10.1002/jnm.70019
Hamed Aminzadeh, Mohammadreza Rasekhi, Mohammad Danaie
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引用次数: 0

Abstract

On-chip resistors are susceptible to temperature variations, affecting the performance of linear voltage-to-current (VI) conversion and vice versa. This paper introduces an approach to implement resistive networks that are highly immune to temperature variations across a wide range by combining complementary-to-absolute-temperature (CTAT) and proportional-to-absolute-temperature (PTAT) resistors existing in standard CMOS technology. The proposed resistive networks, aiming for linear VI conversion in voltage and current references (VCRs), yield ultra-low temperature coefficient (TC). Optimization is carried out using a multi-objective heuristic algorithm to find the optimal placement, TC and sizes of the elements within the final configuration. Post-layout simulation results in a standard 0.18-μm CMOS process demonstrate the possibility of implementing sub-3 ppm/°C resistors across −40 ~ 120°C temperature range, improving the prior art by more than 5×. A modern VCR configuration is implemented based on the proposed methodology, and simulation results verify the effectiveness of the modified approach in improving the accuracy of VI conversion.

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来源期刊
CiteScore
4.60
自引率
6.20%
发文量
101
审稿时长
>12 weeks
期刊介绍: Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
期刊最新文献
Temperature-Insensitive On-Chip Resistors for Linear Voltage-To-Current Conversion in Low-Power Voltage and Current References Solutions of the Fractional Differential Equations Including Caputo–Fabrizio, Caputo, and Integer Order Derivatives via SMV Polynomials Application of Spoof Surface Plasmon Polaritons for the Design of Sequential Load Modulated Balanced Amplifier A Novel Hybrid Algorithm for Source Reconstruction Method in Near-Field Prediction Issue Information
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