Synthesis and analysis of optical, electrical and electromagnetic shielding properties of Ag/AZO films

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-10 DOI:10.1007/s10854-025-14485-9

Yongdong Zhang, Haoran Zheng, Pan Yang, Shihui Yu

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Abstract

Ag/AZO films with different Ag layer thickness (abbreviated as Ag(x)/AZO) are prepared using RF magnetron sputtering to investigate the optical, electrical and electromagnetic shielding properties. The figure of merit (FoM) gradually rises to a maximum and then declines with increasing Ag layer thickness due to the unique three-dimensional island growth mode of Ag layer. A highest FoM value of 0.0313 Ω⁻¹ with a transmittance value of 82.9% is achieved at Ag(12 nm)/AZO film. The obtained lower sheet resistance (R_sh: 4.950 Ω/sq) makes it have an optimal average electromagnetic interference shielding effectiveness of 27.1 dB in 1 ~ 10 GHz. Meanwhile, the maximum R_sh change rate of Ag(12 nm)/AZO film (7.61%) is smaller than that of commercial ITO (18.67%) when films are placed in 100–300 ℃ for 30 min at atmospheric environment. These characteristics indicate that Ag(12 nm)/AZO film is suitable for using in electromagnetic shielding field.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.