Exploration of the microwave absorption mechanism of rare earth enhanced M-type strontium ferrite: synergistic effect of lattice occupation and impurity phase

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-10 DOI:10.1007/s10854-025-14513-8
Xiaodong Jing, Qianqian Zhao, Qun Wang, Xiaoqiang Xiong, Xi Yang, Hai Huang, Chenglong Yuan, Junjie Yan, Guoguo Tan, Tongyun Zhao, Huayang Gong
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Abstract

How do rare earth (RE) ions affect the microwave absorption performance of M-type hexagonal ferrites? We synthesized Sr0.9RE0.1Fe12O19 and SrFe12−xRExO19 (x = 0.05, 0.1, 0.4, 0.8, 1.6, RE = La ~ Gd) series to investigate the similarities and differences in the mechanism of RE ion substitution on the absorption properties of materials. The occupancy tendency and substitution limit of RE ions in the M phase lattice, as well as the formation of impurity phases at grain boundaries, are key factors affecting the microwave absorption performance of materials. The synthesized materials include both pure M phase and coexistence of M phase and heterophases, and the heterophases are mainly FeREySr1−yO3−z, CeO2 and RE3Fe5O12. The strontium ferrite substituted with La and Ce has better absorption effect in pure M phase. The RLmin of SrFe11.9La0.1O19 can reach − 60.61 dB and the EABmax is 6.24 GHz with a thickness of 1.96 mm. Strontium ferrite substituted with Pr and Nd can achieve good absorption effects over a large range of substitution amounts, which is not only related to their high substitution limit in the M phase, but also to the perovskite type impurities generated by excessive substitution. The RLmin of the SrFe10.4Nd1.6O19 can reach − 75.34 dB, and the EABmax is 5.16 GHz with a thickness of 1.9 mm. The distribution of strontium ions in the two phases also becomes a key factor affecting the absorption performance. The substitution limit of Eu and Gd in the M phase is small, and excessive addition can form high resistance impurities, resulting in poor absorption efficiency of the system.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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